-
公开(公告)号：US20230230942A1
公开(公告)日：2023-07-20
申请号：US18123467
申请日：2023-03-20
Applicant: Northrop Grumman Systems Corporation
Inventor： Dah-Weih Duan , Elizabeth T. Kunkee , Stephane Larouche
CPC classification number: H01L23/66 , H01P1/20327 , H01L2223/6627 , H01L2223/6655
Abstract: A semiconductor technology implemented high-frequency channelized filter includes a dielectric substrate with metal traces disposed on one of two major surfaces of the substrate. An input and output port disposed on the substrate and one of the metal traces carrying a high-frequency signal to be filtered between the input and output port. Other of the metal traces are connected to the one metal trace at intervals along the length of the one metal trace each providing a reactance to the high-frequency signal where the reactance varies with frequency and additional traces of the metal traces serving as a reference ground for the one metal trace and the other metal traces. A silicon enclosure mounted to the substrate with a first planar surface with cavities in the enclosure that extend through the first surface, and internal walls within the silicon enclosure defining the cavities. A layer of conductive metal covers the first planar surface, cavities and the internal walls. The silicon enclosure having substantially continuous areas of metal on the first planar surface about the periphery of the silicon enclosure that engage corresponding areas of the additional traces about the periphery of the substrate. The cavities surround the respective other metal traces with the internal cavity walls engaging the additional traces adjacent the respective other metal traces to individually surround each of the other metal traces with a conductive metal thereby providing electromagnetic field isolation between each of the other metal traces.
-
公开(公告)号：US20220278059A1
公开(公告)日：2022-09-01
申请号：US17745265
申请日：2022-05-16
Applicant: Northrop Grumman Systems Corporation
Inventor： Dah-Weih Duan , Elizabeth T. Kunkee , Stephane Larouche
Abstract: A semiconductor technology implemented high-frequency channelized filter includes a dielectric substrate with metal traces disposed on one of two major surfaces of the substrate. An input and output port disposed on the substrate and one of the metal traces carrying a high-frequency signal to be filtered between the input and output port. Other of the metal traces are connected to the one metal trace at intervals along the length of the one metal trace each providing a reactance to the high-frequency signal where the reactance varies with frequency and additional traces of the metal traces serving as a reference ground for the one metal trace and the other metal traces. A silicon enclosure mounted to the substrate with a first planar surface with cavities in the enclosure that extend through the first surface, and internal walls within the silicon enclosure defining the cavities. A layer of conductive metal covers the first planar surface, cavities and the internal walls. The silicon enclosure having substantially continuous areas of metal on the first planar surface about the periphery of the silicon enclosure that engage corresponding areas of the additional traces about the periphery of the substrate. The cavities surround the respective other metal traces with the internal cavity walls engaging the additional traces adjacent the respective other metal traces to individually surround each of the other metal traces with a conductive metal thereby providing electromagnetic field isolation between each of the other metal traces.
-
公开(公告)号：US20240047388A1
公开(公告)日：2024-02-08
申请号：US18382598
申请日：2023-10-23
Applicant: Northrop Grumman Systems Corporation
Inventor： Dah-Weih Duan , Elizabeth T. Kunkee , Stephane Larouche
CPC classification number: H01L23/66 , H01P1/20327 , H01L2223/6627 , H01L2223/6655
Abstract: A semiconductor technology implemented high-frequency channelized filter includes a dielectric substrate with metal traces disposed on one of two major surfaces of the substrate. An input and output port disposed on the substrate and one of the metal traces carrying a high-frequency signal to be filtered between the input and output port. Other of the metal traces are connected to the one metal trace at intervals along the length of the one metal trace each providing a reactance to the high-frequency signal where the reactance varies with frequency and additional traces of the metal traces serving as a reference ground for the one metal trace and the other metal traces. A silicon enclosure mounted to the substrate with a first planar surface with cavities in the enclosure that extend through the first surface, and internal walls within the silicon enclosure defining the cavities. A layer of conductive metal covers the first planar surface, cavities and the internal walls. The silicon enclosure having substantially continuous areas of metal on the first planar surface about the periphery of the silicon enclosure that engage corresponding areas of the additional traces about the periphery of the substrate. The cavities surround the respective other metal traces with the internal cavity walls engaging the additional traces adjacent the respective other metal traces to individually surround each of the other metal traces with a conductive metal thereby providing electromagnetic field isolation between each of the other metal traces.
-
公开(公告)号：US10608613B1
公开(公告)日：2020-03-31
申请号：US16434596
申请日：2019-06-07
Applicant: NORTHROP GRUMMAN SYSTEMS CORPORATION
Inventor： Donald DiMarzio , Stephane Larouche , Vesna Radisic
Abstract: A non-reciprocal band pass filter including a transmission line having a plurality of repeating finite size unit cells, where each unit cell has a predetermined length and includes an inductor and a varactor. The filter also includes a signal source providing a transmission signal that propagates on the transmission line, and a modulation source providing a modulation signal that modulates the varactor. A ratio between the predetermined length of the unit cells and a frequency of the modulation signal is selected to provide propagation modes that allow the transmission signal to propagate along the transmission line in one direction in a controlled pass band, but prevent the transmission signal from propagating along the transmission line in the opposite direction in the controlled pass band.
-
公开(公告)号：US20250020829A1
公开(公告)日：2025-01-16
申请号：US18350849
申请日：2023-07-12
Applicant: NORTHROP GRUMMAN SYSTEMS CORPORATION
Inventor： Philip W.C. Hon , Michael L. Dupuis , Shu-i Wang , Stephane Larouche , Sze Wah Lee , Katherine T. Fountaine
Abstract: A telephoto lens assembly including a primary lens sub-assembly having at least one lens, and being operable to collect and focus light to an intermediate focal location. The assembly further includes a secondary lens sub-assembly having at least one refractive lens, and being operable to collect and focus light from the primary lens sub-assembly. The lens assembly also includes a metacorrector positioned relative to the secondary lens sub-assembly and being responsive to the focused light from the secondary lens sub-assembly, where the metacorrector includes a meta-structure that is configured to correct aberrations in the light, provide focusing/defocusing power and/or to remove residual secondary color in the light.
-
Patent Agency Ranking
公开(公告)号：US11658136B2
公开(公告)日：2023-05-23
申请号：US17745265
申请日：2022-05-16
Applicant: Northrop Grumman Systems Corporation
Inventor： Dah-Weih Duan , Elizabeth T. Kunkee , Stephane Larouche
CPC classification number: H01L23/66 , H01P1/20327 , H01L2223/6627 , H01L2223/6655
Abstract: A semiconductor technology implemented high-frequency channelized filter includes a dielectric substrate with metal traces disposed on one of two major surfaces of the substrate. An input and output port disposed on the substrate and one of the metal traces carrying a high-frequency signal to be filtered between the input and output port. Other of the metal traces are connected to the one metal trace at intervals along the length of the one metal trace each providing a reactance to the high-frequency signal where the reactance varies with frequency and additional traces of the metal traces serving as a reference ground for the one metal trace and the other metal traces. A silicon enclosure mounted to the substrate with a first planar surface with cavities in the enclosure that extend through the first surface, and internal walls within the silicon enclosure defining the cavities. A layer of conductive metal covers the first planar surface, cavities and the internal walls. The silicon enclosure having substantially continuous areas of metal on the first planar surface about the periphery of the silicon enclosure that engage corresponding areas of the additional traces about the periphery of the substrate. The cavities surround the respective other metal traces with the internal cavity walls engaging the additional traces adjacent the respective other metal traces to individually surround each of the other metal traces with a conductive metal thereby providing electromagnetic field isolation between each of the other metal traces.
-
公开(公告)号：US12119313B2
公开(公告)日：2024-10-15
申请号：US18382598
申请日：2023-10-23
Applicant: Northrop Grumman Systems Corporation
Inventor： Dah-Weih Duan , Elizabeth T. Kunkee , Stephane Larouche
CPC classification number: H01L23/66 , H01P1/20327 , H01L2223/6627 , H01L2223/6655
Abstract: A semiconductor technology implemented high-frequency channelized filter includes a dielectric substrate with metal traces disposed on one of two major surfaces of the substrate. An input and output port disposed on the substrate and one of the metal traces carrying a high-frequency signal to be filtered between the input and output port. Other of the metal traces are connected to the one metal trace at intervals along the length of the one metal trace each providing a reactance to the high-frequency signal where the reactance varies with frequency and additional traces of the metal traces serving as a reference ground for the one metal trace and the other metal traces. A silicon enclosure mounted to the substrate with a first planar surface with cavities in the enclosure that extend through the first surface, and internal walls within the silicon enclosure defining the cavities. A layer of conductive metal covers the first planar surface, cavities and the internal walls. The silicon enclosure having substantially continuous areas of metal on the first planar surface about the periphery of the silicon enclosure that engage corresponding areas of the additional traces about the periphery of the substrate. The cavities surround the respective other metal traces with the internal cavity walls engaging the additional traces adjacent the respective other metal traces to individually surround each of the other metal traces with a conductive metal thereby providing electromagnetic field isolation between each of the other metal traces.
-
公开(公告)号：US11373965B2
公开(公告)日：2022-06-28
申请号：US16916644
申请日：2020-07-17
Applicant: Northrop Grumman Systems Corporation
Inventor： Dah-Weih Duan , Elizabeth T. Kunkee , Stephane Larouche
Abstract: An exemplary semiconductor technology implemented channelized filter includes a dielectric substrate with semiconductor fabricated metal traces on one surface, and input and output ports. A signal trace connected between the input and output port carries the signal to be filtered. Filter traces connect at intervals along the length of the signal trace to provide a reactance that varies with frequency. Ground traces provide a reference ground. A silicon enclosure with semiconductor fabricated cavities has a metal layer deposited over it. The periphery of the enclosure is dimensioned to engage corresponding ground traces about the periphery of the substrate. Walls of separate cavities enclose each of the filter traces to individually surround each thereby providing electromagnetic field isolation. Metal-to-metal conductive bonds are formed between cavity walls that engage the ground traces to establish a common reference ground. The filter traces preferably meander to minimize the footprint area of the substrate.
-
公开(公告)号：US12181660B2
公开(公告)日：2024-12-31
申请号：US17094940
申请日：2020-11-11
Applicant: NORTHROP GRUMMAN SYSTEMS CORPORATION
Inventor： Donald Di Marzio , Stephane Larouche , Vesna Radisic , Michael R. Hachkowski , Jeffrey L. Cavaco , Michael Wojtowicz
Abstract: An optical assembly including a plurality of metamirrors, where each metamirror includes a substrate, a reflective layer formed to the substrate, an array of optical metaelements extending from the reflective layer and an array of micro-actuators coupled to the substrate opposite to the reflective layer. The combination of the micro-actuators are controlled to control the orientation and bending of the metamirrors to set how the metaelements focus a light beam that is reflected off of the reflective layers.
-
公开(公告)号：US11837561B2
公开(公告)日：2023-12-05
申请号：US18123467
申请日：2023-03-20
Applicant: Northrop Grumman Systems Corporation
Inventor： Dah-Weih Duan , Elizabeth T. Kunkee , Stephane Larouche
CPC classification number: H01L23/66 , H01P1/20327 , H01L2223/6627 , H01L2223/6655
Abstract: A semiconductor technology implemented high-frequency channelized filter includes a dielectric substrate with metal traces disposed on one of two major surfaces of the substrate. An input and output port disposed on the substrate and one of the metal traces carrying a high-frequency signal to be filtered between the input and output port. Other of the metal traces are connected to the one metal trace at intervals along the length of the one metal trace each providing a reactance to the high-frequency signal where the reactance varies with frequency and additional traces of the metal traces serving as a reference ground for the one metal trace and the other metal traces. A silicon enclosure mounted to the substrate with a first planar surface with cavities in the enclosure that extend through the first surface, and internal walls within the silicon enclosure defining the cavities. A layer of conductive metal covers the first planar surface, cavities and the internal walls. The silicon enclosure having substantially continuous areas of metal on the first planar surface about the periphery of the silicon enclosure that engage corresponding areas of the additional traces about the periphery of the substrate. The cavities surround the respective other metal traces with the internal cavity walls engaging the additional traces adjacent the respective other metal traces to individually surround each of the other metal traces with a conductive metal thereby providing electromagnetic field isolation between each of the other metal traces.
-
-
-
-
-
-
-
-
-
Search Results
12
records
(took 0.016 seconds)
