公开(公告)号：US10134791B1

公开(公告)日：2018-11-20

申请号：US15849634

申请日：2017-12-20

Applicant: Novatek Microelectronics Corp.

Inventor： I-Hsiu Chen ,  Wei-Kuo Huang

IPC: H01L27/146 ,  H01L25/16 ,  H01L23/552 ,  H01L31/0232

Abstract: A backside illumination global shutter pixel is disposed in a substrate having a first surface and a second surface and includes an isolation structure having a deep trench isolation pattern, a storage node, and a photoelectric conversion element. The deep trench isolation pattern has a channel and defines a first region and a second region connected with each other by the channel. The storage node is disposed in the second region. The photoelectric conversion element has a main photoelectric conversion portion disposed in the first region and an extending photoelectric conversion portion extended from the main photoelectric conversion portion through the channel to the second region. The extending photoelectric conversion portion is disposed between the second surface and the storage node. A backside illumination global shutter sensor including a plurality of backside illumination global shutter pixels is also provided.