公开(公告)号：US20170167016A1

公开(公告)日：2017-06-15

申请号：US15374563

申请日：2016-12-09

Applicant: OCI COMPANY LTD.

Inventor： Min-Kyung OH ,  Byung-Chang KANG ,  Jong-Soo YOON ,  Min-Young YOON

IPC: C23C16/44 ,  B08B3/04 ,  C23C16/24 ,  B08B3/02

CPC classification number: C23C16/4407 ,  B08B3/02 ,  B08B3/04 ,  C23C16/24 ,  C23C16/4404 ,  C23C16/4418

Abstract: The present disclosure relates to a polysilicon preparation apparatus for preventing ground fault current and having an excellent effect of removing silicon dust. The polysilicon preparation apparatus includes a chamber comprising a housing with an opened lower portion and a base plate coupled to the lower portion of the housing, and a ceramic particle layer on an upper surface of the base plate, for preventing silicon dusts generated during a process from directly contacting the base plate and to be removed together with silicon dusts after the process.