公开(公告)号：US10084145B2

公开(公告)日：2018-09-25

申请号：US15523500

申请日：2015-11-05

Applicant: OKINAWA INSTITUTE OF SCIENCE AND TECHNOLOGY SCHOOL CORPORATION

Inventor： Yabing Qi ,  Min-Cherl Jung ,  Sonia Ruiz Raga

IPC: H01L51/42 ,  H01L51/00

Abstract: An optoelectronic device is provided, the device comprising an active layer comprising organometal halide perovskite and a hole transport layer (HTL) formed by vacuum evaporation and configured to transport hole carriers. The HTL includes a first sublayer comprising a hole transport material (HTM) doped with an n-dopant and disposed adjacent to the active layer, a second sublayer comprising the HTM that is undoped and disposed adjacent to the first sublayer, and a third sublayer comprising the HTM doped with a p-dopant and disposed adjacent to the second sublayer. The doping concentration of the n-dopant for the n-doped sublayer is determined to match the highest occupied molecular orbital energy level of the n-doped sublayer with the valence band maximum energy level of the perovskite active layer.

公开(公告)号：US10115918B2

公开(公告)日：2018-10-30

申请号：US15523500

申请日：2015-11-05

Applicant: OKINAWA INSTITUTE OF SCIENCE AND TECHNOLOGY SCHOOL CORPORATION

Inventor： Yabing Qi ,  Min-Cherl Jung ,  Sonia Ruiz Raga

IPC: H01L51/42 ,  H01L51/00

Abstract: An optoelectronic device is provided, the device comprising an active layer comprising organometal halide perovskite and a hole transport layer (HTL) formed by vacuum evaporation and configured to transport hole carriers. The HTL includes a first sublayer comprising a hole transport material (HTM) doped with an n-dopant and disposed adjacent to the active layer, a second sublayer comprising the HTM that is undoped and disposed adjacent to the first sublayer, and a third sublayer comprising the HTM doped with a p-dopant and disposed adjacent to the second sublayer. The doping concentration of the n-dopant for the n-doped sublayer is determined to match the highest occupied molecular orbital energy level of the n-doped sublayer with the valence band maximum energy level of the perovskite active layer.

公开(公告)号：US20170338430A1

公开(公告)日：2017-11-23

申请号：US15523500

申请日：2015-11-05

Applicant: OKINAWA INSTITUTE OF SCIENCE AND TECHNOLOGY SCHOOL CORPORATION

Inventor： Yabing Qi ,  Min-Cherl Jung ,  Sonia Ruiz Raga

IPC: H01L51/42 ,  H01L51/00

CPC classification number: H01L51/4246 ,  H01L51/001 ,  H01L51/002 ,  H01L51/0083 ,  H01L51/4226 ,  H01L51/4293 ,  Y02E10/549 ,  Y02P70/521

Abstract: An optoelectronic device is provided, the p-doped HTL device comprising an active layer comprising organometal halide perovskite and a hole transport layer (HTL) formed by vacuum evaporation and configured to transport hole carriers. The HTL includes a first sublayer comprising a hole transport material (HTM) doped with an n-dopant and disposed adjacent to the active layer, a second sublayer comprising the HTM that is undoped and disposed adjacent to the first sublayer, and a third sublayer comprising the HTM doped with a p-dopant and disposed adjacent to the second sublayer. The doping concentration of the n-dopant for the n-doped sublayer is determined to match the highest occupied molecular orbital energy level of the n-doped sublayer with the valence band maximum energy level of the perovskite active layer.