公开(公告)号：US20230165018A9

公开(公告)日：2023-05-25

申请号：US16913502

申请日：2020-06-26

申请人： EWHA UNIVERSITY – INDUSTRY COLLABORATION FOUNDATION

发明人： William JO ,  Hye Ri JUNG

IPC分类号： H01L51/42 ,  H01L51/00 ,  H01L51/44

CPC分类号： H01L51/4226 ,  H01L51/4233 ,  H01L51/003 ,  H01L51/0097 ,  H01L51/44 ,  H01L2251/30 ,  C07F11/00

摘要： The present disclosure relates to an optoelectronic device including a heterojunction of a halide perovskite single crystal and a two-dimensional semiconductor material layer and a method of manufacturing the same.

公开(公告)号：US20190221764A1

公开(公告)日：2019-07-18

申请号：US16166344

申请日：2018-10-22

申请人： Panasonic Intellectual Property Management Co., Ltd.

发明人： TAKEYUKI SEKIMOTO ,  MICHIO SUZUKA

IPC分类号： H01L51/44 ,  H01L51/42 ,  H01L31/055

CPC分类号： H01L51/447 ,  H01L31/055 ,  H01L51/4226 ,  H01L51/4233 ,  H01L51/441

摘要： The present disclosure provides a photoabsorber which has a perovskite crystal structure and is represented by the composition formula ABX3, wherein A is a monovalent cation including formamidinium cation A1 and a nitrogen-containing cation A2; the nitrogen-containing cation A2 has a larger ionic radius than the formamidinium cation A1; B is a divalent cation including a Sn cation; and X is a halogen anion. The photoabsorber according to the present disclosure improves conversion efficiency of the perovskite solar cell.

公开(公告)号：US20190214592A1

公开(公告)日：2019-07-11

申请号：US16352521

申请日：2019-03-13

申请人： OXFORD PHOTOVOLTAICS LIMITED

发明人： Terence Alan REID ,  Henry James SNAITH

IPC分类号： H01L51/42 ,  H01G9/20 ,  H01L51/00 ,  H01L51/44 ,  H01L27/30

CPC分类号： H01L51/4226 ,  H01G9/2027 ,  H01G9/2031 ,  H01G9/204 ,  H01L27/301 ,  H01L51/0011 ,  H01L51/0014 ,  H01L51/0017 ,  H01L51/0032 ,  H01L51/42 ,  H01L51/4233 ,  H01L51/4253 ,  H01L51/44 ,  Y02E10/549 ,  Y02P70/521

摘要： A photovoltaic device comprises plural layers separated into plural cells, each comprising a region of a photoactive layer and electrodes on opposite sides thereof. Each of the regions of the photoactive layer are formed comprising a first part that comprises photoactive material and a second part that is not photoactive and that has a greater transmittance of visible light than the light absorbing photoactive material, in pre-selected locations, or in a pre-selected distribution of locations, across the region of the photoactive layer. One of the first and second parts are located in plural separate areas within the other of the first and second parts. The transparency of the photovoltaic device is increased by the transmission of light through the second part that is not photoactive.

公开(公告)号：US20180351019A1

公开(公告)日：2018-12-06

申请号：US15777275

申请日：2016-11-17

申请人： Alliance for Sustainable Energy, LLC ,  Shanghai Jiao Tong University

发明人： Kai Zhu ,  Yixin ZHAO ,  Mengjin Yang ,  Taiyang Zhang

IPC分类号： H01L31/055 ,  H01L31/0256 ,  B32B15/04 ,  C07F7/24

CPC分类号： H01L31/055 ,  B32B15/043 ,  B32B2307/202 ,  B32B2311/14 ,  B32B2311/16 ,  B32B2457/12 ,  C01P2002/34 ,  C01P2002/72 ,  C01P2004/03 ,  C07F7/24 ,  H01L31/0256 ,  H01L51/0003 ,  H01L51/0032 ,  H01L51/4226 ,  H01L2031/0344

摘要： Methods are described that include contacting an alkyl ammonium metal halide film with an alkyl ammonium halide, where the alkyl ammonium metal halide film includes a first halogen and a metal, the alkyl ammonium halide includes a second halogen, such that the contacting forms an alkyl ammonium metal mixed-halide film that interfaces with the alkyl ammonium metal halide film, where the alkyl ammonium metal mixed-halide film includes the first halogen, the second halogen, and the metal.

公开(公告)号：US20180351009A1

公开(公告)日：2018-12-06

申请号：US16057993

申请日：2018-08-08

申请人： ISIS INNOVATION LIMITED

发明人： HENRY SNAITH ,  MICHAEL LEE

IPC分类号： H01L31/0264 ,  H01G9/20 ,  H01L51/42 ,  H01L31/0256

CPC分类号： H01L31/0264 ,  H01G9/2004 ,  H01G9/2036 ,  H01L51/0032 ,  H01L51/4213 ,  H01L51/422 ,  H01L51/4226 ,  H01L2031/0344 ,  H01L2251/306 ,  Y02E10/549 ,  Y02P70/521

摘要： The invention provides an optoelectronic device comprising a porous material, which porous material comprises a semiconductor comprising a perovskite. The porous material may comprise a porous perovskite. Thus, the porous material may be a perovskite material which is itself porous. Additionally or alternatively, the porous material may comprise a porous dielectric scaffold material, such as alumina, and a coating disposed on a surface thereof, which coating comprises the semiconductor comprising the perovskite. Thus, in some embodiments the porosity arises from the dielectric scaffold rather than from the perovskite itself. The porous material is usually infiltrated by a charge transporting material such as a hole conductor, a liquid electrolyte, or an electron conductor. The invention further provides the use of the porous material as a semiconductor in an optoelectronic device. Further provided is the use of the porous material as a photosensitizing, semiconducting material in an optoelectronic device. The invention additionally provides the use of a layer comprising the porous material as a photoactive layer in an optoelectronic device. Further provided is a photoactive layer for an optoelectronic device, which photoactive layer comprises the porous material.

公开(公告)号：US10079320B2

公开(公告)日：2018-09-18

申请号：US14401452

申请日：2013-05-20

申请人： ISIS INNOVATION LIMITED

发明人： Henry Snaith ,  Michael Lee

IPC分类号： H01L31/0264 ,  H01L51/42 ,  H01G9/20 ,  H01L31/0256

CPC分类号： H01L31/0264 ,  H01G9/2004 ,  H01G9/2036 ,  H01L51/0032 ,  H01L51/4213 ,  H01L51/422 ,  H01L51/4226 ,  H01L2031/0344 ,  H01L2251/306 ,  Y02E10/549 ,  Y02P70/521

摘要： The invention provides an optoelectronic device comprising a porous material, which porous material comprises a semiconductor comprising a perovskite. The porous material may comprise a porous perovskite. Thus, the porous material may be a perovskite material which is itself porous. Additionally or alternatively, the porous material may comprise a porous dielectric scaffold material, such as alumina, and a coating disposed on a surface thereof, which coating comprises the semiconductor comprising the perovskite. Thus, in some embodiments the porosity arises from the dielectric scaffold rather than from the perovskite itself. The porous material is usually infiltrated by a charge transporting material such as a hole conductor, a liquid electrolyte, or an electron conductor. The invention further provides the use of the porous material as a semiconductor in an optoelectronic device. Further provided is the use of the porous material as a photosensitizing, semiconducting material in an optoelectronic device. The invention additionally provides the use of a layer comprising the porous material as a photoactive layer in an optoelectronic device. Further provided is a photoactive layer for an optoelectronic device, which photoactive layer comprises the porous material.

公开(公告)号：US20180248133A1

公开(公告)日：2018-08-30

申请号：US15966994

申请日：2018-04-30

申请人： HEE Solar, L.L.C.

发明人： Michael D. Irwin ,  Vivek V. Dhas

IPC分类号： H01L51/00 ,  H01L51/42 ,  H01G9/20 ,  H01L31/18 ,  H01L31/0256

CPC分类号： H01L51/0077 ,  H01G9/2009 ,  H01G9/2027 ,  H01G9/2031 ,  H01G9/2045 ,  H01G9/2059 ,  H01L31/053 ,  H01L31/18 ,  H01L51/006 ,  H01L51/0061 ,  H01L51/42 ,  H01L51/422 ,  H01L51/4226 ,  H01L51/4253 ,  H01L51/4266 ,  H01L51/448 ,  H01L2031/0344 ,  Y02E10/542 ,  Y02E10/549

摘要： Photovoltaic devices such as solar cells, hybrid solar cell-batteries, and other such devices may include an active layer disposed between two electrodes, the active layer having perovskite material and other material such as mesoporous material, interfacial layers, thin-coat interfacial layers, and combinations thereof. The perovskite material may be photoactive. The perovskite material may be disposed between two or more other materials in the photovoltaic device. Inclusion of these materials in various arrangements within an active layer of a photovoltaic device may improve device performance. Other materials may be included to further improve device performance, such as, for example: additional perovskites, and additional interfacial layers.

公开(公告)号：US20180174761A1

公开(公告)日：2018-06-21

申请号：US15735740

申请日：2016-06-10

申请人： OXFORD PHOTOVOLTAICS LIMITED

发明人： Brett Akira KAMINO ,  Laura Miranda PEREZ

IPC分类号： H01G9/20 ,  H01L51/42 ,  H01L31/0725 ,  H01L31/074 ,  H01G9/00 ,  H01L31/0236

CPC分类号： H01G9/2009 ,  C23C18/1204 ,  H01G9/0036 ,  H01L31/02363 ,  H01L31/0725 ,  H01L31/074 ,  H01L51/001 ,  H01L51/4226 ,  H01L51/447 ,  H01L2031/0344 ,  H01L2251/308 ,  Y02E10/549 ,  Y02P70/521

摘要： There is provided a method of producing a photovoltaic device comprising a photoactive region comprising a layer of perovskite material, wherein the layer of perovskite material is disposed on a surface that has a roughness average (Ra) or root mean square roughness (Rrms) of greater than or equal to 50 nm. The method comprises using vapour deposition to deposit a substantially continuous and conformal solid layer comprising one or more initial precursor compounds of the perovskite material, and subsequently treating the solid layer with one or more further precursor compounds to form a substantially continuous and conformal solid layer of the perovskite material on the rough surface. There is also provided a photovoltaic device comprising a photoactive region comprising a layer of perovskite material disposed using the method.

公开(公告)号：US20170338430A1

公开(公告)日：2017-11-23

申请号：US15523500

申请日：2015-11-05

申请人： OKINAWA INSTITUTE OF SCIENCE AND TECHNOLOGY SCHOOL CORPORATION

发明人： Yabing Qi ,  Min-Cherl Jung ,  Sonia Ruiz Raga

IPC分类号： H01L51/42 ,  H01L51/00

CPC分类号： H01L51/4246 ,  H01L51/001 ,  H01L51/002 ,  H01L51/0083 ,  H01L51/4226 ,  H01L51/4293 ,  Y02E10/549 ,  Y02P70/521

摘要： An optoelectronic device is provided, the p-doped HTL device comprising an active layer comprising organometal halide perovskite and a hole transport layer (HTL) formed by vacuum evaporation and configured to transport hole carriers. The HTL includes a first sublayer comprising a hole transport material (HTM) doped with an n-dopant and disposed adjacent to the active layer, a second sublayer comprising the HTM that is undoped and disposed adjacent to the first sublayer, and a third sublayer comprising the HTM doped with a p-dopant and disposed adjacent to the second sublayer. The doping concentration of the n-dopant for the n-doped sublayer is determined to match the highest occupied molecular orbital energy level of the n-doped sublayer with the valence band maximum energy level of the perovskite active layer.

公开(公告)号：US20170309856A1

公开(公告)日：2017-10-26

申请号：US15520647

申请日：2015-10-20

申请人： SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

发明人： Shunpei YAMAZAKI ,  Takayuki IKEDA ,  Yoshiyuki KUROKAWA

IPC分类号： H01L51/50 ,  H01L51/00 ,  C09K11/59 ,  H01L51/42 ,  C09K11/06 ,  H01L51/05

CPC分类号： H01L51/5012 ,  B81B7/008 ,  B81B2201/042 ,  B81C1/00246 ,  B81C2203/0735 ,  C09K11/06 ,  C09K11/59 ,  G02B26/02 ,  G02B26/085 ,  H01L29/786 ,  H01L51/0051 ,  H01L51/0508 ,  H01L51/4226

摘要： A highly reliable micromachine, display element, or the like is provided. As a micromachine or a transistor including the micromachine, a transistor including an oxide semiconductor in a semiconductor layer where a channel is formed is used. For example, a transistor including an oxide semiconductor is used as at least one transistor in one or a plurality of transistors driving a micromachine.