公开(公告)号：US20220028782A1

公开(公告)日：2022-01-27

申请号：US17375314

申请日：2021-07-14

Applicant: OLYMPUS CORPORATION

Inventor： Katsumi HOSOGAI ,  Satoru ADACHI ,  Takatoshi IGARASHI ,  Satoshi NASUNO

IPC: H01L23/522 ,  A61B1/05 ,  H01L27/146

Abstract: A semiconductor device includes a semiconductor substrate, a trench capacitor arranged on the semiconductor substrate, a first wiring layer, a second wiring layer, a first TSV penetrating the semiconductor substrate outside the trench capacitor, a second TSV penetrating the semiconductor substrate outside the trench capacitor, a first connecting terminal connected to the first TSV, a second connecting terminal connected to the first TSV, a third connecting terminal connected to the second TSV, and a fourth connecting terminal connected to the second TSV. A plurality of connecting terminals including the first through fourth connecting terminals are arranged dispersively over an entire area of the first wiring layer and the second wiring layer of the semiconductor device, thereby stabilizing voltage supplied to an image unit and achieving a stable image signal.