公开(公告)号：US10886704B2

公开(公告)日：2021-01-05

申请号：US16711186

申请日：2019-12-11

Applicant: OSRAM OLED GMBH

Inventor： Frank Singer ,  Norwin Von Malm ,  Tilman Ruegheimer ,  Thomas Kippes

IPC: H01S5/227 ,  H01S5/02 ,  H01S5/022 ,  H01S5/042 ,  H01L23/00 ,  H01S5/024 ,  H01S5/323 ,  H01S5/22 ,  H01L21/56

Abstract: In one embodiment of the invention, the semiconductor laser (1) comprises a semiconductor layer sequence (2). The semiconductor layer sequence (2) contains an n-type region (23), a p-type region (21) and an active zone (22) lying between the two. A laser beam is produced in a resonator path (3). The resonator path (3) is aligned parallel to the active zone (22). In addition, the semiconductor laser (1) contains an electrical p-contact (41) and an electrical n-contact (43) each of which is located on the associated region (21, 23) of the semiconductor layer sequence (2) and is configured to input current directly into the associated region (21, 23). The n-contact (43) extends from the p-type region (21) through the active zone (22) and into the n-type region (23) and is located, when viewed from above, next to the resonator path (3).

公开(公告)号：US20200287072A1

公开(公告)日：2020-09-10

申请号：US16754612

申请日：2018-10-16

Applicant: OSRAM OLED GmbH

Inventor： Tilman Ruegheimer ,  Hubert Halbritter

IPC: H01L31/173 ,  G01S17/04 ,  H01L25/16 ,  G01S7/481

Abstract: A semiconductor device includes a first semiconductor body including a substrate having a first thickness, wherein the first semiconductor body includes a first active zone that generates or receives radiation, and a second semiconductor body having a second thickness smaller than the first thickness and including a tear-off point is arranged on the substrate and connected in an electrically conducting manner to the first semiconductor body, wherein the second semiconductor body includes a second active zone that generates or receives radiation, and the second active zone generates radiation and the first active zone detects the radiation, and the first semiconductor body includes contacts on its underside for connection to the semiconductor device.

公开(公告)号：US11735682B2

公开(公告)日：2023-08-22

申请号：US16754612

申请日：2018-10-16

Applicant: OSRAM OLED GmbH

Inventor： Tilman Ruegheimer ,  Hubert Halbritter

IPC: H01L31/173 ,  G01S17/04 ,  G01S7/481 ,  H01L25/16 ,  A61B5/024 ,  G06F3/01

CPC classification number: H01L31/173 ,  G01S7/4815 ,  G01S17/04 ,  H01L25/167 ,  A61B5/02427 ,  G06F3/017

Abstract: A semiconductor device includes a first semiconductor body including a substrate having a first thickness, wherein the first semiconductor body includes a first active zone that generates or receives radiation, and a second semiconductor body having a second thickness smaller than the first thickness and including a tear-off point is arranged on the substrate and connected in an electrically conducting manner to the first semiconductor body, wherein the second semiconductor body includes a second active zone that generates or receives radiation, and the second active zone generates radiation and the first active zone detects the radiation, and the first semiconductor body includes contacts on its underside for connection to the semiconductor device.