公开(公告)号：US10566210B2

公开(公告)日：2020-02-18

申请号：US15552258

申请日：2016-02-19

Applicant: OSRAM Opto Semiconductors GmbH

Inventor： Andreas Rueckerl ,  Roland Zeisel ,  Simeon Katz

IPC: H01L21/3213 ,  H01S5/22 ,  H01L31/0304 ,  H01L33/44 ,  H01L21/02 ,  H01L31/0232 ,  H01L31/0236 ,  H01L33/00

Abstract: The invention relates to a method for structuring a nitride layer (2), comprising the following steps: A) providing a nitride layer (2) formed with silicon nitride of a first type, B) defining regions (40) of said nitride layer (2) to be transformed, and C) inserting the nitride layer (2) into a transformation chamber for the duration of a transformation period, said transformation period being selected such that—at least 80% of the nitride layer (2) regions (40) to be transformed are transformed into oxide regions (41) formed with silicon oxide, and—remaining nitride layer (2) regions (21) remain at least 80% untransformed.