公开(公告)号：US10157952B2

公开(公告)日：2018-12-18

申请号：US14714293

申请日：2015-05-17

Applicant: Panasonic Intellectual Property Management Co., Ltd.

Inventor： Tokuhiko Tamaki ,  Junji Hirase ,  Shigeo Yoshii

IPC: H01L27/146

Abstract: An imaging device includes a semiconductor substrate and at least one unit pixel cell provided to a surface of the semiconductor substrate. Each of the at least one unit pixel cell includes: a photoelectric converter including a pixel electrode and a photoelectric conversion layer located on the pixel electrode, the photoelectric converter converting incident light into electric charges; a charge detection transistor that includes a part of the semiconductor substrate and detects the electric charges; and a reset transistor that includes a gate electrode and initializes a voltage of the photoelectric converter. The pixel electrode is located above the charge detection transistor. The reset transistor is located between the charge detection transistor and the pixel electrode. When viewed from a direction normal to the surface of the semiconductor substrate, at least a part of the gate electrode is located outside the pixel electrode.

公开(公告)号：US10741600B2

公开(公告)日：2020-08-11

申请号：US16186243

申请日：2018-11-09

Applicant: Panasonic Intellectual Property Management Co., Ltd.

Inventor： Tokuhiko Tamaki ,  Junji Hirase ,  Shigeo Yoshii

IPC: H01L27/146

Abstract: An imaging device including a semiconductor substrate; and a pixel. The pixel includes a photoelectric converter having a first electrode, a second electrode and a photoelectric conversion layer sandwiched between the first electrode and the second electrode, the photoelectric converter located above a surface of the semiconductor substrate; a first transistor that includes a part of the semiconductor substrate and detects electric charges; and a second transistor that includes a gate electrode and initializes a voltage of the first electrode. The first electrode, the second transistor, and the first transistor are arranged in that order toward the semiconductor substrate from the first electrode in cross sectional view, and when viewed from the direction normal to the surface of the semiconductor substrate, a part of the gate electrode overlaps the first electrode, and another part of the gate electrode does not overlap the first electrode.

公开(公告)号：US10164123B2

公开(公告)日：2018-12-25

申请号：US14714292

申请日：2015-05-17

Applicant: Panasonic Intellectual Property Management Co., Ltd.

Inventor： Shigeo Yoshii ,  Junji Hirase ,  Daisuke Ueda

IPC: H01L29/861 ,  H01L27/146 ,  H01L29/786 ,  H01L49/02 ,  H01L27/30 ,  H01L27/12

Abstract: An imaging device includes a semiconductor substrate comprising a first semiconductor; and a unit pixel cell provided to the semiconductor substrate. The unit pixel cell includes: a photoelectric converter that includes a pixel electrode and a photoelectric conversion layer, the photoelectric converter converting incident light into electric charges; a charge detection transistor that includes a part of the semiconductor substrate and detects the electric charges; and a reset transistor that includes at least a part of a first semiconductor layer comprising a second semiconductor and initializes a voltage of the photoelectric converter. The pixel electrode is located above the charge detection transistor. The reset transistor is located between the charge detection transistor and the pixel electrode. A band gap of the second semiconductor is larger than a band gap of the first semiconductor.