公开(公告)号：US4426659A

公开(公告)日：1984-01-17

申请号：US252208

申请日：1981-04-08

申请人： Patrick de Bruyne ,  Andre Jaecklin ,  Dieter Eisele

发明人： Patrick de Bruyne ,  Andre Jaecklin ,  Dieter Eisele

IPC分类号： H01L23/04 ,  H01L23/051 ,  H01L23/16 ,  H01L23/60 ,  H01L23/02

CPC分类号： H01L23/60 ,  H01L23/051 ,  H01L23/16 ,  H01L2924/0002

摘要： A housing for high-power semiconductor components is disclosed. The housing consists of an insulator which forms the lateral boundary of the housing, a high-power semiconductor component which is bounded on either side by intermediate disks formed of tungsten or molybdenum, and outer disks formed of copper. The insulator and outer disks are connected by connecting members which may be coated with a protective layer and which surround a protective ring made of a high temperature material such as a ceramic or temperature resistant plastic. The tungsten or molybdenum intermediate disks have a higher total specific energy absorption capacity than does copper.

摘要翻译： 公开了一种用于大功率半导体部件的壳体。 壳体由形成壳体的侧边界的绝缘体，由钨或钼形成的中间盘在任一侧限定的高功率半导体部件和由铜形成的外部圆盘构成。 绝缘体和外盘通过连接构件连接，连接构件可以涂覆有保护层，并且围绕着由诸如陶瓷或耐温塑料的高温材料制成的保护环。 钨或钼中间盘具有比铜更高的总比能吸收能力。