公开(公告)号：US20200161189A1

公开(公告)日：2020-05-21

申请号：US16752157

申请日：2020-01-24

Applicant: QUALCOMM Incorporated

Inventor： Stanley SONG ,  Jeffrey XU ,  Da YANG ,  Kern RIM ,  Choh fei YEAP

IPC: H01L21/8238 ,  H01L29/10 ,  H01L27/092 ,  H01L21/3065 ,  H01L29/66

Abstract: A method of producing a FinFET device with fin pitch of less than 20 nm is presented. In accordance with some embodiments, fins are deposited on sidewall spacers, which themselves are deposited on mandrels. The mandrels can be formed by lithographic processes while the fins and sidewall spacers formed by deposition technologies.

公开(公告)号：US20180082906A1

公开(公告)日：2018-03-22

申请号：US15271043

申请日：2016-09-20

Applicant: QUALCOMM Incorporated

Inventor： Stanley SONG ,  Jeffrey XU ,  Da YANG ,  Kern RIM ,  Choh fei YEAP

IPC: H01L21/8238 ,  H01L27/092 ,  H01L29/10 ,  H01L21/3065

Abstract: A method of producing a FinFET device with fin pitch of less than 20 nm is presented. In accordance with some embodiments, fins are deposited on sidewall spacers, which themselves are deposited on mandrels. The mandrels can be formed by lithographic processes while the fins and sidewall spacers formed by deposition technologies.