公开(公告)号：US10141297B1

公开(公告)日：2018-11-27

申请号：US15830173

申请日：2017-12-04

Applicant: QUALCOMM Incorporated

Inventor： Palkesh Jain ,  Mehdi Saeidi ,  Jon James Anderson ,  Chethan Swamynathan ,  Richard Wunderlich

IPC: H01L27/02 ,  G06F17/50

Abstract: An integrated device that includes a substrate, a device level layer formed over the substrate, and interconnect portion over the device level layer. The device level layer includes a plurality of first device level cells, each first device level cell comprising a first configuration. The device level layer includes a plurality of second device level cells. At least one second device level cell includes a second configuration that is different than the first configuration. The plurality of second device level cells is located over at least one region of the integrated device comprising at least one hotspot.