-
公开(公告)号:US10470225B2
公开(公告)日:2019-11-05
申请号:US15119602
申请日:2014-03-26
发明人: Haijun Zhao , Brian Spencer
摘要: The disclosure is related to searching for a second device to provide a service that a first device is attempting to establish. The first device sends a search profile and a capabilities profile to the second device using near field communication (NFC), the search profile including criteria describing the service the first device is attempting to establish, the capabilities profile including connection capabilities of the first device, receives a score from the second device, the score indicating a closeness of a match between the search profile and the capabilities profile and one or more services and capabilities of the second device, and determines whether to connect with the second device to establish the service based on the received score.
-
公开(公告)号:US10929526B2
公开(公告)日:2021-02-23
申请号:US16080200
申请日:2016-03-01
申请人: QUALCOMM Incorporated , Haijun Zhao , Jilei Hou , Liang Zhang
发明人: Haijun Zhao , Jilei Hou , Liang Zhang
摘要: Aspects of the disclosure are related to a method, apparatus, and system for using display content from a rich operating system (OS) environment as a background image in a trusted user interface (UI), comprising: capturing a display buffer of the rich OS environment; passing the captured display buffer to a Trusted Application; and displaying, with the Trusted Application, the captured display buffer as the background image in the trusted UI, wherein the Trusted Application is executed in a Trusted Execution Environment (TEE).
-
3.
公开(公告)号:US06383855B1
公开(公告)日:2002-05-07
申请号:US09186505
申请日:1998-11-04
申请人: Minghui Gao , Haijun Zhao , Abhijit Bandyopadhyay , Pang Dow Foo
发明人: Minghui Gao , Haijun Zhao , Abhijit Bandyopadhyay , Pang Dow Foo
IPC分类号: H01L218238
CPC分类号: H01L21/8249
摘要: A bipolar complementary metal oxide semiconductor device has a c-well fabricated using profile engineering (a multi-energy implant using accurate dosages and energies determined by advance simulation) to provide a higher c-well implant dose while creating a narrow region with relatively low concentration in the collector depletion range to avoid low base-collector breakdown. This achieves a much lower collector series resistance to pull-up a frequency response, a collector sheet resistance which can be as low as 150 &OHgr;/sq., and fT may be increased to 20 GHz or higher.
摘要翻译: 双极互补金属氧化物半导体器件具有使用轮廓工程(使用由先进模拟确定的精确剂量和能量的多能量注入)的c-阱制造,以提供更高的c-阱注入剂量,同时产生具有相对低浓度的窄区域 在集电极耗尽范围内,以避免基极集电极故障。 这实现了更低的集电极串联电阻上拉频率响应,集电极薄层电阻可以低至150欧姆/平方,fT可以增加到20GHz或更高。
-
4.
公开(公告)号:US20160246472A1
公开(公告)日:2016-08-25
申请号:US14631518
申请日:2015-02-25
发明人: Haijun Zhao
IPC分类号: G06F3/0488 , G06F3/041
CPC分类号: G06F1/1694 , G06F3/04883 , G06F21/31 , G06F2200/1636 , G06F2203/04808 , H04W12/00508
摘要: Disclosed is a method and apparatus for authenticating a user based on a finger tap sequence on a touch screen. In one embodiment, the operations implemented may include: detecting a plurality of finger taps on a touch screen; measuring tap features for each of the finger taps to create a tap feature vector input including a finger identity (ID) and motion sensor data; and authenticating access by comparing the tap feature vector input to a stored tap feature vector.
摘要翻译: 公开了一种用于基于触摸屏上的手指抽头序列认证用户的方法和装置。 在一个实施例中,所实现的操作可以包括:在触摸屏上检测多个手指抽头; 测量每个手指抽头的抽头特征以创建包括手指身份(ID)和运动传感器数据的抽头特征向量输入; 并通过将抽头特征向量输入与存储的抽头特征向量进行比较来认证访问。
-
-
-