公开(公告)号：US20240030321A1

公开(公告)日：2024-01-25

申请号：US18331453

申请日：2023-06-08

Applicant: RENESAS ELECTRONICS CORPORATION

Inventor： Takuho KAMADA ,  Koji OGATA ,  Kiyoyuki SATOU

IPC: H01L29/739 ,  H01L29/06 ,  H01L29/66

CPC classification number: H01L29/7397 ,  H01L29/0696 ,  H01L29/66348

Abstract: A semiconductor device includes an n-type semiconductor substrate, a trench, and a gate electrode formed in the trench via a gate insulating film. An absolute value of a difference between a thickness of the gate insulating film formed on a corner portion of the trench and a thickness of the gate insulating film formed on the bottom portion of the trench is smaller than an absolute value of a difference between the thickness of the gate insulating film formed on the corner portion of the trench and a thickness of the gate insulating film formed on the sidewall portion of the trench.