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1.
公开(公告)号:US12237258B2
公开(公告)日:2025-02-25
申请号:US17608725
申请日:2020-04-30
Applicant: Rambus Inc.
Inventor: Shahram Nikoukary , Dongwoo Hong , Jonghyun Cho
IPC: H01L23/522 , H01L23/498 , H01L23/528 , H03K19/003 , H04B15/02 , H01L23/66
Abstract: The embodiments herein are directed to technologies for crosstalk cancellation structures. One semiconductor package includes conductive metal layers separated by insulating layers, the conductive metal layers for routing signals between external package terminals and pads on an integrated circuit device. Signal lines formed in the conductive metal layers have electrode structure (capacitor electrode-like structures) formed for at least adjacent signaling lines of the package terminals. Two of the electrode structures from the adjacent signaling lines are formed opposite each other on different metal layers.
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公开(公告)号:US20220319980A1
公开(公告)日:2022-10-06
申请号:US17608725
申请日:2020-04-30
Applicant: Rambus Inc.
Inventor: Shahram Nikoukary , Dongwoo Hong , Jonghyun Cho
IPC: H01L23/522 , H03K19/003 , H04B15/02 , H01L23/498 , H01L23/528
Abstract: The embodiments herein are directed to technologies for crosstalk cancellation structures. One semiconductor package includes conductive metal layers separated by insulating layers, the conductive metal layers for routing signals between external package terminals and pads on an integrated circuit device. Signal lines formed in the conductive metal layers have electrode structure (capacitor electrode-like structures) formed for at least adjacent signaling lines of the package terminals. Two of the electrode structures from the adjacent signaling lines are formed opposite each other on different metal layers.
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