公开(公告)号：US20200303545A1

公开(公告)日：2020-09-24

申请号：US16823337

申请日：2020-03-19

Applicant: RichWave Technology Corp.

Inventor： Chuan-Chen Chao ,  Shyh-Chyi Wong ,  Shu-Yuan Hsu

IPC: H01L29/78 ,  H01L27/06 ,  H01L29/08

Abstract: An integrated circuit includes a logic circuit and an amplifying circuit, in particular a low-noise amplifying circuit. The amplifying circuit includes at least one first transistor. The gate of the first transistor is coupled to a signal input terminal, the source region and the drain region of the first transistor are formed respectively in the well region of the first transistor on both sides of the gate, wherein the source region is coupled to a reference voltage terminal, and the sheet resistance of the source region is lower than that of the drain region. The logic circuit includes at least one second transistor. The sheet resistances of the source region and the drain region of the second transistor are equal.

公开(公告)号：US11069806B2

公开(公告)日：2021-07-20

申请号：US16823337

申请日：2020-03-19

Applicant: RichWave Technology Corp.

Inventor： Chuan-Chen Chao ,  Shyh-Chyi Wong ,  Shu-Yuan Hsu

IPC: H01L29/78 ,  H01L29/08 ,  H01L27/06 ,  H01L29/10 ,  H01L21/8234 ,  H01L27/088 ,  H03F3/213

Abstract: An integrated circuit includes a logic circuit and an amplifying circuit, in particular a low-noise amplifying circuit. The amplifying circuit includes at least one first transistor. The gate of the first transistor is coupled to a signal input terminal, the source region and the drain region of the first transistor are formed respectively in the well region of the first transistor on both sides of the gate, wherein the source region is coupled to a reference voltage terminal, and the sheet resistance of the source region is lower than that of the drain region. The logic circuit includes at least one second transistor. The sheet resistances of the source region and the drain region of the second transistor are equal.

公开(公告)号：US10992268B2

公开(公告)日：2021-04-27

申请号：US16571182

申请日：2019-09-15

Applicant: RichWave Technology Corp.

Inventor： Shyh-Chyi Wong ,  Cheng-Min Lin

IPC: H03F3/191 ,  H03F1/56 ,  H03F1/02

Abstract: A radio frequency signal amplification device includes an amplification circuit, an impedance matching circuit, a frequency detection circuit, and a control circuit. The amplification circuit has an input terminal and an output terminal. The amplification circuit amplifies a radio frequency (RF) signal received from the input terminal, and generates an amplified radio frequency signal to the output terminal. The impedance matching circuit is coupled to the input terminal or the output terminal of the amplification circuit. The impedance matching circuit receives the radio frequency signal and provides an impedance matching the radio frequency signal, or receives the amplified radio frequency signal and provides an impedance matching the amplified radio frequency signal. The frequency detection circuit determines a frequency band to which the radio frequency signal belongs. The control circuit adjusts the impedance of the impedance matching circuit according to the frequency band.