Abstract:
A thin film transistor include a control electrode, a semiconductor layer on the control electrode, an input electrode, at least a portion of the input electrode being on the semiconductor layer, and an output electrode spaced apart from the input electrode, at least a portion of the output electrode being on the semiconductor layer. Each of the input electrode and the output electrode includes a wiring layer including a metal material, a dummy portion on a side part of the wiring layer, the dummy portion including an oxide of the metal material, and a protection layer on the wiring layer, the protection layer overlapping the wiring layer and the dummy portion.