公开(公告)号：US12132110B2

公开(公告)日：2024-10-29

申请号：US17462554

申请日：2021-08-31

申请人： KOOKMIN UNIVERSITY INDUSTRY ACADEMY COOPERATION FOUNDATION

发明人： Dae Hwan Kim ,  Dong Yeon Kang ,  Jun Tae Jang ,  Shin Young Park ,  Hyun Kyu Lee ,  Sung Jin Choi ,  Dong Myoung Kim ,  Wonjung Kim

IPC分类号： H01L29/786 ,  G06N3/063 ,  H01L21/02 ,  H01L29/66 ,  H01L29/78 ,  H01L29/788

CPC分类号： H01L29/7841 ,  G06N3/063 ,  H01L21/02178 ,  H01L21/02565 ,  H01L29/66969 ,  H01L29/7869 ,  H01L29/7883

摘要： Disclosed is a synaptic transistor, including a substrate, an expansion gate electrode disposed to extend in one direction on the substrate, a gate insulating layer including ions, covering the expansion gate electrode, and disposed on the substrate, a channel layer disposed on the gate insulating layer to correspond to one end of the expansion gate electrode, source and drain electrodes spaced apart from each other, covering both ends of the channel layer, and disposed on the gate insulating layer, and a pad electrode disposed on the gate insulating layer to correspond to the other end of the expansion gate electrode.

公开(公告)号：US20240355822A1

公开(公告)日：2024-10-24

申请号：US18304393

申请日：2023-04-21

申请人： TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.

发明人： Che Chi SHIH ,  Tsung-En LEE ,  Wu-Wei TSAI ,  Wei-Yen WOON ,  Szuya LIAO

IPC分类号： H01L27/092 ,  H01L21/02 ,  H01L21/8258 ,  H01L29/06 ,  H01L29/24 ,  H01L29/423 ,  H01L29/66 ,  H01L29/775

CPC分类号： H01L27/0922 ,  H01L21/02565 ,  H01L21/02603 ,  H01L21/8258 ,  H01L29/0673 ,  H01L29/24 ,  H01L29/42392 ,  H01L29/66969 ,  H01L29/775

摘要： A semiconductor device includes a first transistor and a second transistor vertically stacked over the first transistor. The first transistor includes a semiconductor channel layer, a first gate structure wrapping around the semiconductor channel layer, and first source/drain structures on opposite ends of the semiconductor channel layer. The second transistor includes a metal oxide channel layer, a second gate structure wrapping around the metal oxide channel layer, and second source/drain structures on opposite ends of the metal oxide channel layer.

公开(公告)号：US20240347633A1

公开(公告)日：2024-10-17

申请号：US18757386

申请日：2024-06-27

申请人： Taiwan Semiconductor Manufacturing Company Limited

发明人： Jiamin Wang ,  Blanka Magyari-Kope ,  Chris Liu ,  Ashwathi Iyer

IPC分类号： H01L29/78 ,  H01L21/02 ,  H01L21/28 ,  H01L29/49 ,  H01L29/51 ,  H01L29/66 ,  H01L29/786 ,  H10B51/30

CPC分类号： H01L29/78391 ,  H01L21/02565 ,  H01L29/40111 ,  H01L29/4908 ,  H01L29/516 ,  H01L29/66969 ,  H01L29/78618 ,  H01L29/7869 ,  H10B51/30

摘要： A semiconductor structure includes, from bottom to top or from top to bottom, a gate electrode, a ferroelectric dielectric layer, a metal-rich metal oxide layer, a dielectric metal nitride layer, and a metal oxide semiconductor layer. A ferroelectric field effect transistor may be provided by forming a source region and a drain region on the metal oxide semiconductor layer. The metal-rich metal oxide layer and the dielectric metal nitride layer homogenize and stabilize the interface between the ferroelectric dielectric layer and the metal oxide semiconductor layer, and reduce excess oxygen atoms at the interface, thereby improving switching characteristics of the ferroelectric field effect transistor.

公开(公告)号：US20240347338A1

公开(公告)日：2024-10-17

申请号：US18755651

申请日：2024-06-26

申请人： UNITED MICROELECTRONICS CORP.

发明人： Shin-Hung Li

IPC分类号： H01L21/02 ,  H01L21/8258 ,  H01L29/66 ,  H01L29/786

CPC分类号： H01L21/02565 ,  H01L21/8258 ,  H01L29/66969 ,  H01L29/7869

摘要： The present invention provides a semiconductor structure, including a substrate, a thin-film transistor (TFT) on the substrate, wherein the thin-film transistor including a TFT channel layer, a first source and a first drain in the TFT channel layer and a first capping layer on the TFT channel layer. A MOSFET is on the substrate, with a second gate, a second source and a second drain on two sides of the second gate and a second capping layer on the second gate, wherein top surfaces of the second capping layer and the first capping layer are leveled, and a first ILD layer is on the first capping layer and the second capping layer, wherein the first ILD layer and the first capping layer function collectively as a gate dielectric layer for the TFT.

公开(公告)号：US20240345089A1

公开(公告)日：2024-10-17

申请号：US18734733

申请日：2024-06-05

申请人： AKHAN Semiconductor, Inc.

发明人： Adam Khan ,  Ernest Schirmann ,  Kiran Kumar Kovi

IPC分类号： G01N33/569 ,  B82Y5/00 ,  B82Y30/00 ,  B82Y35/00 ,  B82Y40/00 ,  C01B32/198 ,  C01B32/26 ,  C23C16/02 ,  C23C16/27 ,  C23C16/513 ,  G01N27/414 ,  G01N33/551 ,  H01L29/66

CPC分类号： G01N33/56983 ,  C01B32/198 ,  C01B32/26 ,  C23C16/0236 ,  C23C16/271 ,  C23C16/274 ,  C23C16/279 ,  C23C16/513 ,  G01N27/4145 ,  G01N33/551 ,  H01L29/66969 ,  B82Y5/00 ,  B82Y30/00 ,  B82Y35/00 ,  B82Y40/00 ,  C01B2204/22 ,  C01B2204/32 ,  C01P2002/60 ,  C01P2004/16 ,  C01P2004/64 ,  G01N2333/165

摘要： Disclosed herein is a system and method for transistor pathogen virus detector in which one embodiment may include a substrate layer, a silicon dioxide layer on the substrate layer, a nanocrystalline diamond layer on the silicon dioxide layer, a graphene oxide layer on the nanocrystalline diamond layer, fluorinated graphene oxide portions; and a linker layer, the linker layer including a plurality of pathogen receptors.

公开(公告)号：US12120943B2

公开(公告)日：2024-10-15

申请号：US18363944

申请日：2023-08-02

申请人： Samsung Display Co., LTD.

发明人： Wang Woo Lee ,  Sung Ho Kim ,  Hyeon Sik Kim ,  Joon Hyoung Park ,  Seok Je Seong ,  Jin Sung An ,  Jin Seok Oh ,  Min Woo Woo ,  Ji Seon Lee ,  Pil Suk Lee ,  Yun Sik Joo

IPC分类号： H10K59/131 ,  H10K59/121 ,  H10K71/00 ,  H10K71/80 ,  H10K77/10 ,  H01L27/12 ,  H01L29/66 ,  H01L29/786 ,  H10K59/12 ,  H10K102/00

CPC分类号： H10K77/111 ,  H10K59/1213 ,  H10K59/131 ,  H10K71/00 ,  H10K71/80 ,  H01L27/1218 ,  H01L27/1225 ,  H01L27/124 ,  H01L27/1251 ,  H01L27/1266 ,  H01L27/127 ,  H01L27/1288 ,  H01L29/66757 ,  H01L29/66969 ,  H01L29/78675 ,  H01L29/7869 ,  H10K59/1201 ,  H10K2102/311

摘要： A display device includes a supporting substrate including a polymeric material, base substrate disposed on an upper surface of the supporting substrate, a pixel array disposed in a display area of the base substrate, a transfer wiring disposed in a bending area of the base substrate and electrically connected to the pixel array, and an organic filling portion disposed under the transfer wiring in the bending area. The base substrate includes an organic film including a polymeric material, and an inorganic barrier film overlapping the organic film and extending outwardly from an edge of the organic film. The organic filling portion contacts the organic film of the base substrate.

公开(公告)号：US12113134B2

公开(公告)日：2024-10-08

申请号：US18447360

申请日：2023-08-10

申请人： Mikuni Electron Corporation

发明人： Sakae Tanaka

IPC分类号： H01L29/786 ,  H01L21/02 ,  H01L27/12 ,  H01L29/24 ,  H01L29/423 ,  H01L29/66 ,  H10K59/12 ,  H10K59/121 ,  H10K59/124

CPC分类号： H01L29/78693 ,  H01L21/02565 ,  H01L21/02631 ,  H01L27/1225 ,  H01L27/127 ,  H01L29/24 ,  H01L29/42384 ,  H01L29/66969 ,  H01L29/78648 ,  H01L29/78696 ,  H01L27/1248 ,  H10K59/1201 ,  H10K59/1213 ,  H10K59/124

摘要： A transistor in an embodiment includes an oxide semiconductor layer on a substrate, the oxide semiconductor layer including a first region and a second region, a first gate electrode including a region overlapping the oxide semiconductor layer, the first gate electrode being arranged on a surface of the oxide semiconductor layer opposite to the substrate, a first insulating layer between the first gate electrode and the oxide semiconductor layer, and a first oxide conductive layer and a second oxide conductive layer between the oxide semiconductor layer and the substrate, the first oxide conductive layer and the second oxide conductive layer each including a region in contact with the oxide semiconductor layer.

公开(公告)号：US20240334708A1

公开(公告)日：2024-10-03

申请号：US18742325

申请日：2024-06-13

申请人： Taiwan Semiconductor Manufacturing Co., Ltd.

发明人： Chao-I Wu ,  Yu-Ming Lin ,  Han-Jong Chia

IPC分类号： H10B51/30 ,  H01L21/02 ,  H01L29/24 ,  H01L29/66 ,  H01L29/78 ,  H10B51/20

CPC分类号： H10B51/30 ,  H01L21/02565 ,  H01L29/24 ,  H01L29/66969 ,  H01L29/78391 ,  H10B51/20

摘要： A memory device includes: a first layer stack and a second layer stack formed successively over a substrate, where each of the first and the second layer stacks includes a first metal layer, a second metal layer, and a first dielectric material between the first and the second metal layers; a second dielectric material between the first and the second layer stacks; a gate electrode extending through the first and the second layer stacks, and through the second dielectric material; a ferroelectric material extending along and contacting a sidewall of the gate electrode; and a channel material, where a first portion and a second portion of the channel material extend along and contact a first sidewall of the first layer stack and a second sidewall of the second layer stack, respectively, where the first portion and the second portion of the channel material are separated from each other.

公开(公告)号：US20240332426A1

公开(公告)日：2024-10-03

申请号：US18576205

申请日：2022-07-08

申请人： ZINITE CORPORATION

发明人： Douglas W. BARLAGE ,  Lhing Gem SHOUTE ,  Kenneth C. CADIEN ,  Alex Munnlick MA ,  Eric Wilson MILBURN

IPC分类号： H01L29/786 ,  H01L29/66

CPC分类号： H01L29/7869 ,  H01L29/66969 ,  H01L29/78603 ,  H01L29/78618 ,  H01L29/78642

摘要： Novel semiconductor devices are taught. The novel devices include a thin film transistor (TFT) with an n-type semiconductor layer to form a channel between a source and a drain. The TFT further includes a source-channel interfacial member adjacent to at least the source contact of the device to provide depletion layer control of the operation of the TFT.

公开(公告)号：US20240332285A1

公开(公告)日：2024-10-03

申请号：US18129702

申请日：2023-03-31

申请人： Intel Corporation

发明人： Sukru Yemenicioglu ,  Abhishek Anil Sharma ,  Sudipto Naskar ,  Kalyan C. Kolluru ,  Chu-Hsin Liang ,  Bashir Uddin Mahmud ,  Van Le

IPC分类号： H01L27/02 ,  H01L21/84 ,  H01L29/66 ,  H01L29/786 ,  H01L29/872 ,  H02H9/04

CPC分类号： H01L27/0266 ,  H01L21/84 ,  H01L27/0255 ,  H01L27/0296 ,  H01L29/6603 ,  H01L29/66143 ,  H01L29/66212 ,  H01L29/66522 ,  H01L29/66742 ,  H01L29/66969 ,  H01L29/78696 ,  H01L29/872 ,  H02H9/046

摘要： An integrated circuit device comprising a resistor formed on a non-crystalline substrate, the resistor comprising a gate electrode; a gate dielectric in contact with the gate electrode; a source electrode and a drain electrode; and a thin film transistor TFT channel material coupled between the source electrode and the drain electrode.