公开(公告)号：US20230380783A1

公开(公告)日：2023-11-30

申请号：US18095926

申请日：2023-01-11

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Jaeyong LEE ,  Hidong KWAK ,  Minjung SHIN ,  Seungryeol OH ,  Chuhee LEE ,  Byunghyun HWANG

IPC: A61B6/00

CPC classification number: A61B6/44 ,  A61B6/483

Abstract: A semiconductor device measurement method using X-ray scattering includes preparing a semiconductor device including a repeat structure, irradiating X-rays onto the semiconductor device to obtain a first X-ray scattering image, calculating a second X-ray scattering image through simulation, the second X-ray scattering image corresponding to a target repeat structure for the semiconductor device, generating a repeat structure mask by analyzing a position of a signal for a regular repeat structure from the second X-ray scattering image, removing the repeat structure mask from the first X-ray scattering image and generating an error image; and analyzing the error image and calculating irregularities for the repeat structure of the semiconductor device.