公开(公告)号：US20160178541A1

公开(公告)日：2016-06-23

申请号：US14972879

申请日：2015-12-17

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Byunghyun HWANG ,  Junhwan LEE

IPC: G01N23/20 ,  G01N23/203

CPC classification number: G01N23/20075 ,  G01N2223/204 ,  G01N2223/308

Abstract: An apparatus analyzes a thin film having multiple layers. The apparatus includes an X-ray generator, a detector, and a signal processor. The X-ray generator radiates multi-wavelength X-rays sequentially onto a substrate stacked with the multi-layer thin film. The detector detects the multi-wavelength X-rays reflected from the substrate. The signal processor analyzes the multi-wavelength X-rays detected in the detector to determine a thickness of the multi-layer thin film.

Abstract translation: 一种装置分析具有多层的薄膜。 该装置包括X射线发生器，检测器和信号处理器。 X射线发生器将多波长X射线顺序地辐射到层叠有多层薄膜的基板上。 检测器检测从基板反射的多波长X射线。 信号处理器分析在检测器中检测的多波长X射线以确定多层薄膜的厚度。

公开(公告)号：US20230380783A1

公开(公告)日：2023-11-30

申请号：US18095926

申请日：2023-01-11

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Jaeyong LEE ,  Hidong KWAK ,  Minjung SHIN ,  Seungryeol OH ,  Chuhee LEE ,  Byunghyun HWANG

IPC: A61B6/00

CPC classification number: A61B6/44 ,  A61B6/483

Abstract: A semiconductor device measurement method using X-ray scattering includes preparing a semiconductor device including a repeat structure, irradiating X-rays onto the semiconductor device to obtain a first X-ray scattering image, calculating a second X-ray scattering image through simulation, the second X-ray scattering image corresponding to a target repeat structure for the semiconductor device, generating a repeat structure mask by analyzing a position of a signal for a regular repeat structure from the second X-ray scattering image, removing the repeat structure mask from the first X-ray scattering image and generating an error image; and analyzing the error image and calculating irregularities for the repeat structure of the semiconductor device.