公开(公告)号：US20150059486A1

公开(公告)日：2015-03-05

申请号：US14478755

申请日：2014-09-05

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Chwee Lin CHOONG ,  Jongjin PARK ,  Jihyun BAE ,  Byoungsun LEE ,  Jungkyun IM

IPC: G01L9/00

CPC classification number: G01L9/0052 ,  G01L1/2206 ,  G01L1/2293 ,  G01L2009/0069

Abstract: Provided is a pressure sensor including an elastic thin film including a first surface and a second surface that face each other, the elastic thin film including an elastomer material, a plurality of protruding deformable structures patterned on the first surface; a piezoresistive electrode formed along surfaces of the plurality of protruding deformable structures; and a counter electrode disposed to face the piezoresistive electrode.

Abstract translation: 提供一种压力传感器，包括弹性薄膜，该弹性薄膜包括第一表面和彼此面对的第二表面，所述弹性薄膜包括弹性体材料，在所述第一表面上图案化的多个突出的可变形结构; 形成在所述多个突出的可变形结构的表面上的压阻电极; 以及设置成面对压阻电极的对置电极。

公开(公告)号：US20130168657A1

公开(公告)日：2013-07-04

申请号：US13734552

申请日：2013-01-04

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Chwee Lin CHOONG ,  Jung-kyun IM ,  Jong-jin PARK ,  Jae-hyun HUR

IPC: H01L51/05 ,  H01L51/00

CPC classification number: H01L51/0558 ,  H01L51/0001 ,  H01L51/0036 ,  H01L51/0097 ,  H01L51/0512 ,  Y02E10/549 ,  Y02P70/521

Abstract: A thin film transistor formed on a fiber and method of manufacturing the same. The thin film transistor includes a fiber; a first electrode that is disposed on the fiber; a second electrode that is disposed on the fiber and space apart from the first electrode; a gate electrode that is disposed on the fiber; a channel that is disposed between the first electrode and the second electrode; and a gate insulating layer that is disposed on the first electrode, the second electrode, the gate electrode and the channel; and an encapsulant that encapsulates the gate insulating layer.

Abstract translation: 在纤维上形成的薄膜晶体管及其制造方法。 薄膜晶体管包括光纤; 布置在所述纤维上的第一电极; 第二电极，其设置在所述纤维上并且与所述第一电极分开的空间; 设置在光纤上的栅电极; 设置在所述第一电极和所述第二电极之间的通道; 以及栅极绝缘层，其设置在所述第一电极，所述第二电极，所述栅电极和所述沟道上; 以及封装所述栅极绝缘层的密封剂。