公开(公告)号：US20210225648A1

公开(公告)日：2021-07-22

申请号：US17224609

申请日：2021-04-07

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Chang-woo NOH ,  Myung-gil KANG ,  Ho-jun KIM ,  Geum-jong BAE ,  Dong-il BAE

IPC: H01L21/02 ,  H01L21/762 ,  H01L29/78 ,  H01L29/165 ,  H01L21/768 ,  H01L29/06 ,  H01L29/423

Abstract: A semiconductor device according to an example embodiment includes a substrate extending in first and second directions intersecting with each other; nanowires on the substrate and spaced apart from each other in the second direction; gate electrodes extending in the first direction and spaced apart from each other in the second direction, and surrounding the nanowires to be superimposed vertically with the nanowires; external spacers on the substrate and covering sidewalls of the gate electrodes on the nanowires; and an isolation layer between the gate electrodes and extending in the first direction, wherein an upper surface of the isolation layer is flush with upper surfaces of the gate electrodes.

公开(公告)号：US20200075331A1

公开(公告)日：2020-03-05

申请号：US16361914

申请日：2019-03-22

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Chang-woo NOH ,  Myung-gil KANG ,  Ho-jun KIM ,  Geum-jong BAE ,  Dong-il BAE

IPC: H01L21/02 ,  H01L21/762 ,  H01L21/768 ,  H01L29/165 ,  H01L29/78

Abstract: A semiconductor device according to an example embodiment includes a substrate extending in first and second directions intersecting with each other; nanowires on the substrate and spaced apart from each other in the second direction; gate electrodes extending in the first direction and spaced apart from each other in the second direction, and surrounding the nanowires to be superimposed vertically with the nanowires; external spacers on the substrate and covering sidewalls of the gate electrodes on the nanowires; and an isolation layer between the gate electrodes and extending in the first direction, wherein an upper surface of the isolation layer is flush with upper surfaces of the gate electrodes.