公开(公告)号：US20240324192A1

公开(公告)日：2024-09-26

申请号：US18613868

申请日：2024-03-22

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Eun Young LEE ,  Shigenobu MAEDA ,  Kwan Young KIM ,  Bora KIM ,  Hoonjin BANG ,  Sangjin LEE

IPC: H10B20/25

CPC classification number: H10B20/25

Abstract: A one-time programmable (OTP) memory device includes: a semiconductor substrate having a write region and a read region; write gates disposed in the write region of the semiconductor substrate; read gates disposed in the read region of the semiconductor substrate; source/drain regions arranged adjacent to the write gates and the read gates and arranged in the semiconductor substrate; and a device isolation layer located between the write gates and arranged in the semiconductor substrate, wherein, in the semiconductor substrate, channel regions located below the write gates have a first conductivity type, wherein the source/drain regions have a second conductivity type, different from the first conductivity type, and wherein a pocket well is formed in the write region of the semiconductor substrate and has the second conductivity type.

公开(公告)号：US20230371237A1

公开(公告)日：2023-11-16

申请号：US18226891

申请日：2023-07-27

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Eun Young LEE ,  Do Hyung KIM ,  Taek Jung KIM ,  Seung Jong PARK ,  Jae Wha PARK ,  Youn Jae CHO

IPC: H10B12/00 ,  H01L23/528 ,  H01L23/532

CPC classification number: H10B12/315 ,  H01L23/528 ,  H01L23/53266 ,  H10B12/34 ,  H10N50/01

Abstract: A semiconductor device and a method of fabricating a semiconductor device, the device including a substrate including an element isolation film and an active region defined by the element isolation film; a word line crossing the active region in a first direction; and a bit line structure on the substrate and connected to the active region, the bit line structure extending in a second direction crossing the first direction, wherein the bit line structure includes a first cell interconnection film including an amorphous material or ruthenium, a second cell interconnection film on and extending along the first cell interconnection film and including ruthenium, and a cell capping film on and extending along the second cell interconnection film.

公开(公告)号：US20220173108A1

公开(公告)日：2022-06-02

申请号：US17372880

申请日：2021-07-12

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Eun Young LEE ,  Do Hyung KIM ,  Taek Jung KIM ,  Seung Jong PARK ,  Jae Wha PARK ,  Youn Jae CHO

IPC: H01L27/108 ,  H01L23/532 ,  H01L23/528

Abstract: A semiconductor device and a method of fabricating a semiconductor device, the device including a substrate including an element isolation film and an active region defined by the element isolation film; a word line crossing the active region in a first direction; and a bit line structure on the substrate and connected to the active region, the bit line structure extending in a second direction crossing the first direction, wherein the bit line structure includes a first cell interconnection film including an amorphous material or ruthenium, a second cell interconnection film on and extending along the first cell interconnection film and including ruthenium, and a cell capping film on and extending along the second cell interconnection film.