公开(公告)号：US20250123243A1

公开(公告)日：2025-04-17

申请号：US18670118

申请日：2024-05-21

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Hyeon Bo SHIM ,  Souk KIM ,  Younghoon SOHN ,  Jaeho KIM ,  Inseok PARK ,  Jaewon YANG ,  Minho RIM

IPC: G01N29/04 ,  G01N29/24

Abstract: A semiconductor substrate inspection device is provided and includes: a function generator that generates a first signal and a second signal; an ultrasonic generator that receives the first signal generated from the function generator, generates an ultrasonic wave based on the first signal, and generates a surface wave signal on an upper surface of a substrate using the ultrasonic wave; and an electron beam measurer that inspects the surface wave signal, wherein the electron beam measurer includes: a laser light source that receives the second signal generated from the function generator and generates a first pulse laser beam based on the second signal; an electron beam generator that receives the first pulse laser beam and generates an electron beam that is emitted onto the upper surface of the substrate; and a backscattered electron detector that detects backscattered electrons generated based on the electron beam being incident on the substrate.

公开(公告)号：US20240248051A1

公开(公告)日：2024-07-25

申请号：US18458565

申请日：2023-08-30

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Jaehyung AHN ,  Inseok PARK ,  Joonseo SONG ,  Souk KIM ,  Younghoon SOHN

IPC: G01N23/2251 ,  G06T7/00 ,  G06T7/80

CPC classification number: G01N23/2251 ,  G06T7/0004 ,  G06T7/80 ,  G01N2223/303 ,  G01N2223/401 ,  G01N2223/6116 ,  G06T2207/10061 ,  G06T2207/30148

Abstract: A wafer measurement apparatus includes an electronic-optical system configured to irradiate a wafer with an electron beam and acquire a raw signal by detecting electrons emitted by the wafer, and an image processing device configured to convert the raw signal acquired by the electronic-optical system into image data. The electronic-optical system includes a detector configured to acquire the raw signal. The detector calibrates a gain offset using a difference in electron emission yields of different materials.