公开(公告)号：US20150340445A1

公开(公告)日：2015-11-26

申请号：US14645888

申请日：2015-03-12

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Joon-Young CHOI ,  Tae-Gon KIM ,  Hyun-Pil NOH ,  Jae-Sik BAE ,  Sam-Jong CHOI

IPC: H01L29/36 ,  H01L27/146

CPC classification number: H01L29/36 ,  H01L27/1461 ,  H01L27/14612 ,  H01L27/14621 ,  H01L27/14627 ,  H01L27/14643 ,  H01L27/14683 ,  H01L27/14689

Abstract: A substrate structure include a lower substrate doped with n-type impurities having a first impurity concentration, an epitaxial layer on the lower substrate, and a metallic-contaminant collection area spaced apart from the epitaxial layer in the lower substrate, the metallic-contaminant collection area doped with impurities having a second impurity concentration higher than the first impurity concentration, the metallic-contaminant collection area having lattice defects, and an upper surface of the metallic-contaminant collection area being spaced apart from a top surface of the lower substrate at a distance in a range of about 0.1 μm to about 3 μm.

Abstract translation: 衬底结构包括掺杂有具有第一杂质浓度的n型杂质的下衬底，下衬底上的外延层和与下衬底中的外延层间隔开的金属污染物收集区域，金属污染物收集 掺杂有第二杂质浓度高于第一杂质浓度的杂质的区域，金属污染物收集区域具有晶格缺陷，并且金属污染物收集区域的上表面与下基板的顶表面间隔开 在约0.1μm至约3μm的范围内的距离。