公开(公告)号：US20240167162A1

公开(公告)日：2024-05-23

申请号：US18215916

申请日：2023-06-29

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Jihyeong LEE ,  Sangyeon OH ,  Minsung KIM ,  Byeongsang KIM ,  Yihwan KIM ,  Sangchul HAN

IPC: C23C16/458 ,  C23C16/46

CPC classification number: C23C16/4586 ,  C23C16/4581 ,  C23C16/46

Abstract: A substrate processing apparatus includes a chamber providing a space for performing a semiconductor process on a semiconductor substrate, and a substrate stage configured to support the semiconductor substrate. The substrate stage includes a platen having a seating surface to support the semiconductor substrate, the platen having a resistance heater and an RF electrode adjacent to the seating surface, a shaft under the platen, the shaft having a first through hole in a central region and a plurality of second through holes in a peripheral region surrounding the central region, an RF rod spaced apart from an inner wall of the first through hole, the RF rod electrically connected to the RF electrode, and a plurality of heater rods respectively within the plurality of second through holes and electrically connected to the resistance heater.