公开(公告)号：US20200216758A1

公开(公告)日：2020-07-09

申请号：US16565690

申请日：2019-09-10

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Jung-ah KIM ,  Young-chan KIM ,  Hyo-san LEE ,  Hoon HAN ,  Jin-uk LEE ,  Jung-hun LIM ,  Ik-hee KIM

IPC: C09K13/04 ,  H01L21/311 ,  H01L21/02 ,  H01L21/8234

Abstract: An etchant composition and a method of fabricating a semiconductor device, the composition including an inorganic acid; about 0.01 parts by weight to about 0.5 parts by weight of colloidal silica; about 0.01 parts by weight to about 30 parts by weight of an ammonium-based additive; and about 20 parts by weight to about 50 parts by weight of a solvent, all parts by weight being based on 100 parts by weight of the inorganic acid.

公开(公告)号：US20220025261A1

公开(公告)日：2022-01-27

申请号：US17496174

申请日：2021-10-07

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Jung-ah KIM ,  Young-chan KIM ,  Hyo-san LEE ,  Hoon HAN ,  Jin-uk LEE ,  Jung-hun LIM ,  Ik-hee KIM

IPC: C09K13/04 ,  H01L21/311 ,  H01L21/02 ,  H01L21/8234

Abstract: An etchant composition and a method of fabricating a semiconductor device, the composition including an inorganic acid; about 0.01 parts by weight to about 0.5 parts by weight of colloidal silica; about 0.01 parts by weight to about 30 parts by weight of an ammonium-based additive; and about 20 parts by weight to about 50 parts by weight of a solvent, all parts by weight being based on 100 parts by weight of the inorganic acid.