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公开(公告)号:US10216578B2
公开(公告)日:2019-02-26
申请号:US15285588
申请日:2016-10-05
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor: Ju Pyung Lee
Abstract: A data storage device includes a nonvolatile memory arranged in drives and stripes, a buffer storing state information for each of the stripes, and a memory controller including a redundant array of independent disks (RAID) controller that operates in a spare region mode and performs data recovery using garbage collection based on the state information. The state information includes a first state indicating that none of the drives has malfunctioned, a second state indicating one of the drives has malfunctioned, and a third state indicating that data/parity stored in a malfunctioning drive has been recovered.
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公开(公告)号:US10884857B2
公开(公告)日:2021-01-05
申请号:US16124227
申请日:2018-09-07
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor: Satish Kumar , Ju Pyung Lee
Abstract: A storage device includes multiple memory devices and a memory controller. The memory controller receives, from a host, values corresponding to data stored in the memory devices and keys for identifying the values, generates parities for inspecting the data for any errors based on the values, and manages key-value mapping information regarding a correspondence between the values and the keys. The memory devices include a first memory device and a second memory device, which store the values and the keys, and a third memory device, which stores parity values calculated from the values and a parity value header for managing the parity values.
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公开(公告)号:US11112976B2
公开(公告)日:2021-09-07
申请号:US16362733
申请日:2019-03-25
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor: Hyung Chul Jang , Jae Ju Kim , Young-Ho Park , Chan Soo Kim , Ju Pyung Lee
Abstract: A data storage device includes a non-volatile memory, including a first region and a second region different from the first region, and a controller which stores first and second data in a first region of the non-volatile memory. The first region of the non-volatile memory includes first and second storage regions. A part of the first data is stored in the first storage region, and another part of the first data is stored in the second storage region. The second data is stored in the second storage region, and an offset value of the second storage region in which the second data is started is stored in the second region of the non-volatile memory.
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公开(公告)号:US10430278B2
公开(公告)日:2019-10-01
申请号:US15673942
申请日:2017-08-10
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor: Ju Pyung Lee
Abstract: A redundant array of inexpensive disks (RAID) system including nonvolatile memory and an operating method of the same is provided. A nonvolatile memory device implemented as a RAID and including a plurality of first memory chips, which store data chunks, and a second memory chip, in which spare memory regions are defined. A RAID controller controls RAID operations and a rebuild operation of the nonvolatile memory device. The RAID controller monitors a failure probability of each of the first memory chips, and in response to detecting a failure probability of two or more first memory chips that satisfies a predefined threshold value, a first rebuild on data stored in each of the first memory chips is performed to store the data in the second memory chip. A second rebuild on data stored in the first memory chip having the failure using data stored in the second memory chip.
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公开(公告)号:US10387245B2
公开(公告)日:2019-08-20
申请号:US15645248
申请日:2017-07-10
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor: Ju Pyung Lee
Abstract: Provided is a RAID system that includes a memory device including a plurality of nonvolatile memories storing data chunks and first and second parity bits corresponding to the data chunks, a RAID controller configured to control a RAID operation and a rebuild operation of the memory device, and a host configured to communicate with the RAID controller at an input/output (I/O) rate. The RAID controller is configured to perform a first rebuild operation using the first parity bit and a first policy having a first rebuild rate, to perform a second rebuild operation using the first and second parity bits and a second policy having a second rebuild rate, to apply a first sub-rate as the first rebuild rate until the I/O rate reaches a predetermined value, and to apply a second sub-rate as the first rebuild rate when the I/O rate is greater than the predetermined value.
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