公开(公告)号：US20170213870A1

公开(公告)日：2017-07-27

申请号：US15285922

申请日：2016-10-05

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： KYU-RIE SIM ,  GWAN-HYEOB KOH ,  DAE-HWAN KANG

IPC: H01L27/24 ,  H01L45/00

CPC classification number: H01L27/2481 ,  H01L27/2427 ,  H01L45/06 ,  H01L45/1233 ,  H01L45/126 ,  H01L45/144 ,  H01L45/1608 ,  H01L45/1675

Abstract: The inventive concept provides a memory device, in which memory cells are arranged to have a low variation in electrical characteristics and thereby enhanced reliability, an electronic apparatus including the memory device, and a method of manufacturing the memory device. In the memory device, memory cells at different levels may be covered with spacers having different thicknesses, and this may control resistance characteristics (e.g., set resistance) of the memory cells and to reduce a vertical variation in electrical characteristics of the memory cells. Furthermore, by adjusting the thicknesses of the spacers, a sensing margin of the memory cells may increase.

公开(公告)号：US20180247978A1

公开(公告)日：2018-08-30

申请号：US15964493

申请日：2018-04-27

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： KYU-RIE SIM ,  Gwan-Hyeob Koh ,  Dae-Hwan Kang

IPC: H01L27/24 ,  H01L45/00

CPC classification number: H01L27/2481 ,  H01L27/2427 ,  H01L45/06 ,  H01L45/1233 ,  H01L45/126 ,  H01L45/144 ,  H01L45/1608 ,  H01L45/1675

Abstract: The inventive concept provides a memory device, in which memory cells are arranged to have a low variation in electrical characteristics and thereby enhanced reliability, an electronic apparatus including the memory device, and a method of manufacturing the memory device. In the memory device, memory cells at different levels may be covered with spacers having different thicknesses, and this may control resistance characteristics (e.g., set resistance) of the memory cells and to reduce a vertical variation in electrical characteristics of the memory cells. Furthermore, by adjusting the thicknesses of the spacers, a sensing margin of the memory cells may increase.

公开(公告)号：US20170309683A1

公开(公告)日：2017-10-26

申请号：US15633029

申请日：2017-06-26

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： KYU-RIE SIM ,  Gwan-Hyeob Koh ,  Dae-Hwan Kang

IPC: H01L27/24 ,  H01L45/00

CPC classification number: H01L27/2481 ,  H01L27/2427 ,  H01L45/06 ,  H01L45/1233 ,  H01L45/126 ,  H01L45/144 ,  H01L45/1608 ,  H01L45/1675

Abstract: The inventive concept provides a memory device, in which memory cells are arranged to have a low variation in electrical characteristics and thereby enhanced reliability, an electronic apparatus including the memory device, and a method of manufacturing the memory device. In the memory device, memory cells at different levels may be covered with spacers having different thicknesses, and this may control resistance characteristics (e.g., set resistance) of the memory cells and to reduce a vertical variation in electrical characteristics of the memory cells. Furthermore, by adjusting the thicknesses of the spacers, a sensing margin of the memory cells may increase.