公开(公告)号：US20200027842A1

公开(公告)日：2020-01-23

申请号：US16383816

申请日：2019-04-15

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Kyung-Tae LEE ,  Seung-Hoon CHOI ,  Min-Chan GWAK ,  Ja-Eung KOO ,  Sang-Hyun PARK

IPC: H01L23/544 ,  H01L29/78 ,  H01L29/423 ,  H01L29/417 ,  H01L29/51

Abstract: A semiconductor device may include a gate electrode structure on a first region of a substrate including the first region and a second region, a capping structure covering an upper surface of the gate electrode structure, the capping structure including a capping pattern and a first etch stop pattern covering a lower surface and a sidewall of the capping pattern, an alignment key on the second region of the substrate, the alignment key including an insulating material, and a filling structure on the second region of the substrate, the filling structure covering a sidewall of the alignment key, and including a first filling pattern, a second filling pattern covering a lower surface and a sidewall of the first filling pattern and a second etch stop pattern covering a lower surface and a sidewall of the second filling pattern.