公开(公告)号：US20230132080A1

公开(公告)日：2023-04-27

申请号：US17867195

申请日：2022-07-18

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Seungil CHAI ,  Kyunghee SHIN ,  Daehee LEE ,  Moonhui LEE

IPC: H01L23/528 ,  H01L23/522 ,  H01L27/11524

Abstract: A semiconductor device, includes a plurality of semiconductor elements, each of the plurality of semiconductor elements including a gate structure extending in a first direction and an active region provided on both sides of the gate structure in a second direction intersecting the first direction; and a plurality of interconnection patterns connected to the plurality of semiconductor elements, wherein the plurality of interconnection patterns include a plurality of upper interconnections provided above the plurality of semiconductor elements in a third direction, a plurality of intermediate interconnections provided between the plurality of semiconductor elements and the plurality of upper interconnections in the third direction, and a routing interconnection adjacent to at least one of the plurality of semiconductor elements in the second direction, wherein the routing interconnection is connected to at least one of the plurality of intermediate interconnections in the first direction or the second direction.