公开(公告)号：US11522015B2

公开(公告)日：2022-12-06

申请号：US16789546

申请日：2020-02-13

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Junghoon Bak ,  Woojin Kim ,  Junghwan Moon ,  Seowon Lee ,  Nayoung Ji

IPC: H01L27/24 ,  G11C13/00 ,  H01L27/22

Abstract: A variable resistance memory device includes a first conductive line, a bipolar selection device on the first conductive line and electrically connected to the first conductive line, a second conductive line on the first conductive line and electrically connected to the bipolar selection device, a variable resistance layer on the second conductive line and electrically connected to the second conductive line, and a third conductive line on the variable resistance layer and electrically connected to the variable resistance layer.