公开(公告)号：US20220028895A1

公开(公告)日：2022-01-27

申请号：US17494275

申请日：2021-10-05

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Weonhong KIM ,  Pilkyu KANG ,  Yuichiro SASAKI ,  Sungkeun LIM ,  Yongho HA ,  Sangjin HYUN ,  Kughwan KIM ,  Seungha OH

IPC: H01L27/12 ,  H01L21/762 ,  H01L27/02

Abstract: An integrated circuit device includes an embedded insulation layer, a semiconductor layer on the embedded insulation layer, the semiconductor layer having a main surface, and a plurality of fin-type active areas protruding from the main surface to extend in a first horizontal direction and in parallel with one another, a separation insulation layer separating the semiconductor layer into at least two element regions adjacent to each other in a second horizontal direction intersecting the first horizontal direction, source/drain regions on the plurality of fin-type active areas, a first conductive plug on and electrically connected to the source/drain regions, a buried rail electrically connected to the first conductive plug while penetrating through the separation insulation layer and the semiconductor layer, and a power delivery structure arranged in the embedded insulation layer, the power delivery structure being in contact with and electrically connected to the buried rail.

公开(公告)号：US20210305130A1

公开(公告)日：2021-09-30

申请号：US17036145

申请日：2020-09-29

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Sohye CHO ,  Pilkyu KANG ,  Kwangjin MOON ,  Taeseong KIM

IPC: H01L23/48 ,  H01L23/528 ,  H01L27/11 ,  H01L21/768

Abstract: An integrated circuit semiconductor device includes a substrate including a first surface and a second surface opposite the first surface, a trench in the substrate, the trench extending from the first surface of the substrate toward the second surface of the substrate, a through silicon via (TSV) landing part in the trench, the TSV landing part having a first portion spaced apart from the first surface of the substrate, and a second portion between the first portion and the first surface of the substrate, the first portion being wider than the second portion, a TSV hole in the substrate, the TSV hole extending from the second surface of the substrate and aligned with a bottom surface of the TSV landing part, and a TSV in the TSV hole and in contact with the bottom surface of the TSV landing part.

公开(公告)号：US20200373331A1

公开(公告)日：2020-11-26

申请号：US16807410

申请日：2020-03-03

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Weonhong KIM ,  Pilkyu KANG ,  Yuichiro SASAKI ,  Sungkeun LIM ,  Yongho HA ,  Sangjin HYUN ,  Kughwan KIM ,  Seungha OH

IPC: H01L27/12 ,  H01L27/02 ,  H01L21/762

Abstract: An integrated circuit device includes an embedded insulation layer, a semiconductor layer on the embedded insulation layer, the semiconductor layer having a main surface, and a plurality of fin-type active areas protruding from the main surface to extend in a first horizontal direction and in parallel with one another, a separation insulation layer separating the semiconductor layer into at least two element regions adjacent to each other in a second horizontal direction intersecting the first horizontal direction, source/drain regions on the plurality of fin-type active areas, a first conductive plug on and electrically connected to the source/drain regions, a buried rail electrically connected to the first conductive plug while penetrating through the separation insulation layer and the semiconductor layer, and a power delivery structure arranged in the embedded insulation layer, the power delivery structure being in contact with and electrically connected to the buried rail.