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公开(公告)号:US20220028895A1
公开(公告)日:2022-01-27
申请号:US17494275
申请日:2021-10-05
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor: Weonhong KIM , Pilkyu KANG , Yuichiro SASAKI , Sungkeun LIM , Yongho HA , Sangjin HYUN , Kughwan KIM , Seungha OH
IPC: H01L27/12 , H01L21/762 , H01L27/02
Abstract: An integrated circuit device includes an embedded insulation layer, a semiconductor layer on the embedded insulation layer, the semiconductor layer having a main surface, and a plurality of fin-type active areas protruding from the main surface to extend in a first horizontal direction and in parallel with one another, a separation insulation layer separating the semiconductor layer into at least two element regions adjacent to each other in a second horizontal direction intersecting the first horizontal direction, source/drain regions on the plurality of fin-type active areas, a first conductive plug on and electrically connected to the source/drain regions, a buried rail electrically connected to the first conductive plug while penetrating through the separation insulation layer and the semiconductor layer, and a power delivery structure arranged in the embedded insulation layer, the power delivery structure being in contact with and electrically connected to the buried rail.
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公开(公告)号:US20200373331A1
公开(公告)日:2020-11-26
申请号:US16807410
申请日:2020-03-03
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor: Weonhong KIM , Pilkyu KANG , Yuichiro SASAKI , Sungkeun LIM , Yongho HA , Sangjin HYUN , Kughwan KIM , Seungha OH
IPC: H01L27/12 , H01L27/02 , H01L21/762
Abstract: An integrated circuit device includes an embedded insulation layer, a semiconductor layer on the embedded insulation layer, the semiconductor layer having a main surface, and a plurality of fin-type active areas protruding from the main surface to extend in a first horizontal direction and in parallel with one another, a separation insulation layer separating the semiconductor layer into at least two element regions adjacent to each other in a second horizontal direction intersecting the first horizontal direction, source/drain regions on the plurality of fin-type active areas, a first conductive plug on and electrically connected to the source/drain regions, a buried rail electrically connected to the first conductive plug while penetrating through the separation insulation layer and the semiconductor layer, and a power delivery structure arranged in the embedded insulation layer, the power delivery structure being in contact with and electrically connected to the buried rail.
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