公开(公告)号：US20240071921A1

公开(公告)日：2024-02-29

申请号：US18142795

申请日：2023-05-03

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Minkyu CHUNG ,  Sangjae LEE ,  Seungyoon KIM ,  Jaehwang SIM

IPC: H01L23/528 ,  H01L23/522 ,  H01L25/065

CPC classification number: H01L23/5283 ,  H01L23/5226 ,  H01L25/0652 ,  H10B41/27 ,  H10B41/35 ,  H10B41/40 ,  H10B43/27 ,  H10B43/35 ,  H10B43/40 ,  H10B80/00

Abstract: A semiconductor device may include a first structure, a second structure on the first structure, and gate contact plugs penetrating through the first and second structures. The first structure may include a first stack structure including first gate layers and first insulating layers alternately stacked, a first pad capping pattern penetrating through at least a first portion of the first stack structure, and a first buffer capping pattern penetrating through at least a second portion of the first stack structure and spaced apart from the first pad capping pattern. The second structure may include a second stack structure including second gate layers and second insulating layers alternately stacked, and a second pad capping pattern penetrating through at least a portion of the second stack structure. The first gate layers may include first gate pads covered by the first pad capping pattern.