公开(公告)号：US11417833B2

公开(公告)日：2022-08-16

申请号：US17008744

申请日：2020-09-01

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Woo-Jin Kim ,  Shin-Hee Han

IPC: H01L43/02 ,  H01L27/22 ,  H01L43/12 ,  H01L43/10

Abstract: A MRAM device includes a first insulating interlayer on a substrate including a cell region and a peripheral region, lower electrode contacts extending through the first insulating interlayer of the cell region, a first structure on each of the lower electrode contacts, the first structure including a lower electrode, a magnetic tunnel junction structure, and an upper electrode sequentially stacked, and a capping layer covering surfaces of the first insulating interlayer and the first structure in the cell and peripheral regions, wherein an upper surface of the capping layer on the first insulating interlayer in the peripheral region is higher than an upper surface of the capping layer on the first insulating interlayer between the first structures in the cell region.

公开(公告)号：US10797228B2

公开(公告)日：2020-10-06

申请号：US16366136

申请日：2019-03-27

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Woo-Jin Kim ,  Shin-Hee Han

IPC: H01L29/82 ,  H01L43/02 ,  H01L27/22 ,  H01L43/12 ,  H01L43/10

Abstract: A MRAM device includes a first insulating interlayer on a substrate including a cell region and a peripheral region, lower electrode contacts extending through the first insulating interlayer of the cell region, a first structure on each of the lower electrode contacts, the first structure including a lower electrode, a magnetic tunnel junction structure, and an upper electrode sequentially stacked, and a capping layer covering surfaces of the first insulating interlayer and the first structure in the cell and peripheral regions, wherein an upper surface of the capping layer on the first insulating interlayer in the peripheral region is higher than an upper surface of the capping layer on the first insulating interlayer between the first structures in the cell region.