公开(公告)号：US20240404010A1

公开(公告)日：2024-12-05

申请号：US18798017

申请日：2024-08-08

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Praful MATHUR ,  Siddhant KHANDELWAL ,  Mrinmoy SEN ,  Sai Pradyumna CHERMALA ,  Nazrinbanu Nurmohammad NAGORI ,  Venkat Ramana PEDDIGARI ,  Darshana Venkatesh MURTHY ,  Moonhwan JEONG

IPC: G06T5/20 ,  G06T5/50 ,  G06T7/11 ,  G06T7/136 ,  G06V20/70

Abstract: A method for generating one or more artifact images is disclosed. The method includes obtaining one or more artifact free images and one or more artifacts represented by one or more artifact masks; obtaining a region of interest (ROI) mask identifying one or more ROIs in the one or more artifact free images; generating one or more transformed artifact masks by applying at least one localization parameter amongst a plurality of localization parameters to the one or more artifact masks; generating one or more localized artifact masks by placing the one or more transformed artifact masks on the ROI mask; and generating one or more artifact images by combining the one or more artifact free images and the one or more localized artifact masks.