公开(公告)号：US10693040B2

公开(公告)日：2020-06-23

申请号：US16104405

申请日：2018-08-17

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Tae Bae Kim ,  Sang Kyun Im ,  Hyun Kyung Kim ,  Young Hun Choi

IPC: H01L33/00 ,  H01L33/32 ,  H01L33/62 ,  H01L33/48

Abstract: A light emitting device includes a semiconductor layer, and a light emitting layer disposed in the semiconductor layer and having a composition ratio of Ga(1-x)InxN. x is greater than 0.14 but less than 0.16 to emit a green light from the light emitting layer, or greater than 0.22 but less than 0.26 to emit a blue light from the light emitting layer.