公开(公告)号：US20210074596A1

公开(公告)日：2021-03-11

申请号：US16846724

申请日：2020-04-13

Applicant: Samsung Electronics Co., Ltd.

Inventor： Taehyo KIM ,  Daeseok BYEON ,  Chanho KIM

IPC: H01L21/66 ,  G01N21/95 ,  H01L23/544

Abstract: A semiconductor device includes a semiconductor die, a semiconductor integrated circuit, an outer crack detection structure, a plurality of inner crack detection structures and a plurality of path selection circuits. The semiconductor die includes a central region and an edge region surrounding the central region. The semiconductor integrated circuit is in a plurality of sub regions of the central region. The outer crack detection structure is in the edge region. The plurality of inner crack detection structures are respectively in the plurality of sub regions, respectively. The path selection circuits are configured to control an electrical connection between the outer crack detection structure and the plurality of inner crack detection structures. A crack in the central region in addition to a crack in the edge region may be detected efficiently through selective electrical connection of the outer crack detection structure and the inner crack detection structures.

公开(公告)号：US20210335427A1

公开(公告)日：2021-10-28

申请号：US17121015

申请日：2020-12-14

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Taehyo KIM ,  Daeseok Byeon ,  Youngmin JO ,  Seungwon Lee

IPC: G11C16/22 ,  G11C16/04 ,  G11C16/10 ,  G11C16/26 ,  H01L27/11556 ,  H01L27/11529 ,  H01L27/11582 ,  H01L27/11573 ,  H01L25/065 ,  H01L25/18 ,  H01L23/00

Abstract: A memory device including: a memory area having a first memory block and a second memory block; and a control logic configured to control the first memory block and the second memory block in a first mode and a second mode, wherein in the first mode only a control operation for the first memory block is executable, and in the second mode control operations for the first memory block and the second memory block are executable, wherein the control logic counts the number of accesses made to the second memory block in the first mode, and stores the number of accesses as scan data in the second memory block.