公开(公告)号：US11468919B2

公开(公告)日：2022-10-11

申请号：US16841850

申请日：2020-04-07

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Tae Jin Park ,  Won Seok Yoo ,  Keun Nam Kim ,  Hyo-Sub Kim ,  So Hyun Park ,  In Kyoung Heo ,  Yoo Sang Hwang

IPC: G11C5/06 ,  H01L27/108

Abstract: A semiconductor device is provided. The semiconductor device includes a substrate a bit line structure disposed on the substrate, a trench adjacent to at least one side of the bit line structure, a storage contact structure disposed within the trench, and comprising a storage contact, a silicide layer, and a storage pad which are stacked sequentially. A spacer structure is disposed between the bit line structure and the storage contact structure.

公开(公告)号：US20210035613A1

公开(公告)日：2021-02-04

申请号：US16841850

申请日：2020-04-07

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Tae Jin PARK ,  Won Seok Yoo ,  Keun Nam Kim ,  Hyo-Sub Kim ,  So Hyun Park ,  In Kyoung Heo ,  Yoo Sang Hwang

IPC: G11C5/06 ,  H01L27/108

Abstract: A semiconductor device is provided. The semiconductor device includes a substrate a bit line structure disposed on the substrate, a trench adjacent to at least one side of the bit line structure, a storage contact structure disposed within the trench, and comprising a storage contact, a silicide layer, and a storage pad which are stacked sequentially. A spacer structure is disposed between the bit line structure and the storage contact structure.