公开(公告)号：US20240379164A1

公开(公告)日：2024-11-14

申请号：US18602636

申请日：2024-03-12

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Woosul SHIN ,  Sungwon Yun ,  Hyunkook Park ,  Hyunjun Yoon

IPC: G11C16/10 ,  G11C16/08 ,  G11C16/34

Abstract: A method of programming data in a nonvolatile memory device includes setting a state ordering to a first state ordering, the state ordering representing a relationship between a plurality of states and data values of multi-bit data, performing, based on the first state ordering, a program operation on target memory cells of the plurality of memory cells, swapping the state ordering from the first state ordering to a second state ordering different from the first state ordering, performing, based on the second state ordering, the program operation on the target memory cells, re-swapping the state ordering from the second state ordering to the first state ordering, and performing, based on the first state ordering, the program operation on the target memory cells. Each memory cell of a plurality of memory cells of the nonvolatile memory device is programmed to have one of the plurality of states.