公开(公告)号：US12068367B2

公开(公告)日：2024-08-20

申请号：US17581026

申请日：2022-01-21

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Jun Hyeok Kim ,  Jae-Hyun Yoo ,  Ui Hui Kwon ,  Kyu Ok Lee ,  Yong Woo Jeon ,  Da Won Jeong

IPC: H01L29/06 ,  H01L29/423 ,  H01L29/78

CPC classification number: H01L29/0653 ,  H01L29/42376 ,  H01L29/7816

Abstract: A semiconductor device includes a substrate, a gate electrode disposed on an upper surface of the substrate, a source region disposed on a first side of the gate electrode, a drain region disposed on a second side of the gate electrode opposite to the first side of the gate electrode in a horizontal direction, and an insulating structure at least partially buried inside the substrate on the substrate. The insulating structure includes a first portion disposed between the substrate and the gate electrode, and a second portion in contact with the drain region. An uppermost surface of the second portion of the insulating structure is lower than an uppermost surface of the first portion of the insulating structure. At least a part of the gate electrode is disposed on the uppermost surface of the second portion of the insulating structure.

公开(公告)号：US20220406891A1

公开(公告)日：2022-12-22

申请号：US17581026

申请日：2022-01-21

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Jun Hyeok Kim ,  Jae-Hyun Yoo ,  Ui Hui Kwon ,  Kyu Ok Lee ,  Yong Woo Jeon ,  Da Won Jeong

IPC: H01L29/06 ,  H01L29/423 ,  H01L29/78

Abstract: A semiconductor device includes a substrate, a gate electrode disposed on an upper surface of the substrate, a source region disposed on a first side of the gate electrode, a drain region disposed on a second side of the gate electrode opposite to the first side of the gate electrode in a horizontal direction, and an insulating structure at least partially buried inside the substrate on the substrate. The insulating structure includes a first portion disposed between the substrate and the gate electrode, and a second portion in contact with the drain region. An uppermost surface of the second portion of the insulating structure is lower than an uppermost surface of the first portion of the insulating structure. At least a part of the gate electrode is disposed on the uppermost surface of the second portion of the insulating structure.