Semiconductor device
    1.
    发明授权

    公开(公告)号:US12068367B2

    公开(公告)日:2024-08-20

    申请号:US17581026

    申请日:2022-01-21

    CPC classification number: H01L29/0653 H01L29/42376 H01L29/7816

    Abstract: A semiconductor device includes a substrate, a gate electrode disposed on an upper surface of the substrate, a source region disposed on a first side of the gate electrode, a drain region disposed on a second side of the gate electrode opposite to the first side of the gate electrode in a horizontal direction, and an insulating structure at least partially buried inside the substrate on the substrate. The insulating structure includes a first portion disposed between the substrate and the gate electrode, and a second portion in contact with the drain region. An uppermost surface of the second portion of the insulating structure is lower than an uppermost surface of the first portion of the insulating structure. At least a part of the gate electrode is disposed on the uppermost surface of the second portion of the insulating structure.

    SEMICONDUCTOR DEVICE
    2.
    发明申请

    公开(公告)号:US20220406891A1

    公开(公告)日:2022-12-22

    申请号:US17581026

    申请日:2022-01-21

    Abstract: A semiconductor device includes a substrate, a gate electrode disposed on an upper surface of the substrate, a source region disposed on a first side of the gate electrode, a drain region disposed on a second side of the gate electrode opposite to the first side of the gate electrode in a horizontal direction, and an insulating structure at least partially buried inside the substrate on the substrate. The insulating structure includes a first portion disposed between the substrate and the gate electrode, and a second portion in contact with the drain region. An uppermost surface of the second portion of the insulating structure is lower than an uppermost surface of the first portion of the insulating structure. At least a part of the gate electrode is disposed on the uppermost surface of the second portion of the insulating structure.

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