公开(公告)号：US20200321061A1

公开(公告)日：2020-10-08

申请号：US16909830

申请日：2020-06-23

Applicant: SANDISK TECHNOLOGIES LLC

Inventor： Dae Wung Kang ,  Peter Rabkin ,  Masaaki Higashitani

IPC: G11C16/26 ,  G11C7/04 ,  G11C16/04 ,  G11C11/4074 ,  G11C11/56

Abstract: Methods and systems for improving the reliability of data stored within a semiconductor memory over a wide range of operating temperatures are described. The amount of shifting in the threshold voltages of memory cell transistors over temperature may depend on the location of the memory cell transistors within a NAND string. To compensate for these variations, the threshold voltages of memory cell transistors in the middle of the NAND string or associated with a range of word lines between the ends of the NAND string may be adjusted by increasing the word line voltages biasing memory cell transistors on the drain-side of the selected word line when the read temperature is greater than a first threshold temperature and/or decreasing the word line voltages biasing memory cell transistors on the source-side of the selected word line when the read temperature is less than a second threshold temperature.

公开(公告)号：US11031088B2

公开(公告)日：2021-06-08

申请号：US16909830

申请日：2020-06-23

Applicant: SANDISK TECHNOLOGIES LLC

Inventor： Dae Wung Kang ,  Peter Rabkin ,  Masaaki Higashitani

IPC: G11C16/26 ,  G11C7/04 ,  G11C16/04 ,  G11C11/4074 ,  G11C11/56

Abstract: Methods and systems for improving the reliability of data stored within a semiconductor memory over a wide range of operating temperatures are described. The amount of shifting in the threshold voltages of memory cell transistors over temperature may depend on the location of the memory cell transistors within a NAND string. To compensate for these variations, the threshold voltages of memory cell transistors in the middle of the NAND string or associated with a range of word lines between the ends of the NAND string may be adjusted by increasing the word line voltages biasing memory cell transistors on the drain-side of the selected word line when the read temperature is greater than a first threshold temperature and/or decreasing the word line voltages biasing memory cell transistors on the source-side of the selected word line when the read temperature is less than a second threshold temperature.

公开(公告)号：US10726926B2

公开(公告)日：2020-07-28

申请号：US16248000

申请日：2019-01-15

Applicant: SANDISK TECHNOLOGIES LLC

Inventor： Dae Wung Kang ,  Peter Rabkin ,  Masaaki Higashitani

IPC: G11C16/26 ,  G11C7/04 ,  G11C16/04 ,  G11C11/4074 ,  G11C11/56

Abstract: Methods and systems for improving the reliability of data stored within a semiconductor memory over a wide range of operating temperatures are described. The amount of shifting in the threshold voltages of memory cell transistors over temperature may depend on the location of the memory cell transistors within a NAND string. To compensate for these variations, the threshold voltages of memory cell transistors in the middle of the NAND string or associated with a range of word lines between the ends of the NAND string may be adjusted by increasing the word line voltages biasing memory cell transistors on the drain-side of the selected word line when the read temperature is greater than a first threshold temperature and/or decreasing the word line voltages biasing memory cell transistors on the source-side of the selected word line when the read temperature is less than a second threshold temperature.

公开(公告)号：US20200105349A1

公开(公告)日：2020-04-02

申请号：US16248000

申请日：2019-01-15

Applicant: SANDISK TECHNOLOGIES LLC

Inventor： Dae Wung Kang ,  Peter Rabkin ,  Masaaki Higashitani

IPC: G11C16/26 ,  G11C7/04 ,  G11C11/56 ,  G11C11/4074 ,  G11C16/04

Abstract: Methods and systems for improving the reliability of data stored within a semiconductor memory over a wide range of operating temperatures are described. The amount of shifting in the threshold voltages of memory cell transistors over temperature may depend on the location of the memory cell transistors within a NAND string. To compensate for these variations, the threshold voltages of memory cell transistors in the middle of the NAND string or associated with a range of word lines between the ends of the NAND string may be adjusted by increasing the word line voltages biasing memory cell transistors on the drain-side of the selected word line when the read temperature is greater than a first threshold temperature and/or decreasing the word line voltages biasing memory cell transistors on the source-side of the selected word line when the read temperature is less than a second threshold temperature.