公开(公告)号：US20190067369A1

公开(公告)日：2019-02-28

申请号：US15684150

申请日：2017-08-23

Applicant: SANDISK TECHNOLOGIES LLC

Inventor： Luiz M. Franca-Neto ,  Mac D. Apodaca ,  Christopher J. Petti

IPC: H01L27/24 ,  H01L27/112

Abstract: A non-volatile storage apparatus is proposed that includes a plurality of serially connected non-volatile reversible resistance-switching memory cells, a plurality of word lines such that each of the memory cells is connected to a different word line, a bit line connected to a first end of the serially connected memory cells and a switch connected to a second end of the serially connected memory cells. In one embodiment, the memory cells include a reversible resistance-switching structure comprising a first material, a second material and a reversible resistance-switching interface between the first material and the second material, a channel, and means for switching current between current flowing through the channel and current flowing through the reversible resistance-switching interface in order to program and read the reversible resistance-switching interface. A process for manufacturing the memory is also disclosed.

公开(公告)号：US10217795B1

公开(公告)日：2019-02-26

申请号：US15684150

申请日：2017-08-23

Applicant: SANDISK TECHNOLOGIES LLC

Inventor： Luiz M. Franca-Neto ,  Mac D. Apodaca ,  Christopher J. Petti

IPC: G11C11/00 ,  H01L27/24 ,  H01L27/112 ,  H01L27/32 ,  G11C13/00

Abstract: A non-volatile storage apparatus is proposed that includes a plurality of serially connected non-volatile reversible resistance-switching memory cells, a plurality of word lines such that each of the memory cells is connected to a different word line, a bit line connected to a first end of the serially connected memory cells and a switch connected to a second end of the serially connected memory cells. In one embodiment, the memory cells include a reversible resistance-switching structure comprising a first material, a second material and a reversible resistance-switching interface between the first material and the second material, a channel, and means for switching current between current flowing through the channel and current flowing through the reversible resistance-switching interface in order to program and read the reversible resistance-switching interface. A process for manufacturing the memory is also disclosed.

公开(公告)号：US20190067374A1

公开(公告)日：2019-02-28

申请号：US15684141

申请日：2017-08-23

Applicant: SANDISK TECHNOLOGIES LLC

Inventor： Luiz M. Franca-Neto ,  Mac D. Apodaca ,  Christopher J. Petti

IPC: H01L27/24 ,  G03G5/024 ,  H01L29/786 ,  H01L27/108

Abstract: A non-volatile storage apparatus is proposed that includes a plurality of serially connected non-volatile reversible resistance-switching memory cells, a plurality of word lines such that each of the memory cells is connected to a different word line, a bit line connected to a first end of the serially connected memory cells and a switch connected to a second end of the serially connected memory cells. In one embodiment, the memory cells include a reversible resistance-switching structure comprising a first material, a second material and a reversible resistance-switching interface between the first material and the second material, a channel, and means for switching current between current flowing through the channel and current flowing through the reversible resistance-switching interface in order to program and read the reversible resistance-switching interface. A process for manufacturing the memory is also disclosed.

公开(公告)号：US10283562B2

公开(公告)日：2019-05-07

申请号：US15684162

申请日：2017-08-23

Applicant: SANDISK TECHNOLOGIES LLC

Inventor： Luiz M. Franca-Neto ,  Mac D. Apodaca ,  Christopher J. Petti

IPC: G11C11/00 ,  H01L27/24 ,  H01L27/32 ,  H01L27/112 ,  G11C13/00

Abstract: A non-volatile storage apparatus is proposed that includes a plurality of serially connected non-volatile reversible resistance-switching memory cells, a plurality of word lines such that each of the memory cells is connected to a different word line, a bit line connected to a first end of the serially connected memory cells and a switch connected to a second end of the serially connected memory cells. In one embodiment, the memory cells include a reversible resistance-switching structure comprising a first material, a second material and a reversible resistance-switching interface between the first material and the second material, a channel, and means for switching current between current flowing through the channel and current flowing through the reversible resistance-switching interface in order to program and read the reversible resistance-switching interface. A process for manufacturing the memory is also disclosed.

公开(公告)号：US10249682B2

公开(公告)日：2019-04-02

申请号：US15684141

申请日：2017-08-23

Applicant: SANDISK TECHNOLOGIES LLC

Inventor： Luiz M. Franca-Neto ,  Mac D. Apodaca ,  Christopher J. Petti

IPC: G11C11/22 ,  H01L27/24 ,  G03G5/024 ,  H01L29/786 ,  H01L27/108 ,  H01L29/66 ,  G11C13/00

Abstract: A non-volatile storage apparatus is proposed that includes a plurality of serially connected non-volatile reversible resistance-switching memory cells, a plurality of word lines such that each of the memory cells is connected to a different word line, a bit line connected to a first end of the serially connected memory cells and a switch connected to a second end of the serially connected memory cells. In one embodiment, the memory cells include a reversible resistance-switching structure comprising a first material, a second material and a reversible resistance-switching interface between the first material and the second material, a channel, and means for switching current between current flowing through the channel and current flowing through the reversible resistance-switching interface in order to program and read the reversible resistance-switching interface. A process for manufacturing the memory is also disclosed.

公开(公告)号：US20190067370A1

公开(公告)日：2019-02-28

申请号：US15684162

申请日：2017-08-23

Applicant: SANDISK TECHNOLOGIES LLC

Inventor： Luiz M. Franca-Neto ,  Mac D. Apodaca ,  Christopher J. Petti

IPC: H01L27/24 ,  H01L27/32

Abstract: A non-volatile storage apparatus is proposed that includes a plurality of serially connected non-volatile reversible resistance-switching memory cells, a plurality of word lines such that each of the memory cells is connected to a different word line, a bit line connected to a first end of the serially connected memory cells and a switch connected to a second end of the serially connected memory cells. In one embodiment, the memory cells include a reversible resistance-switching structure comprising a first material, a second material and a reversible resistance-switching interface between the first material and the second material, a channel, and means for switching current between current flowing through the channel and current flowing through the reversible resistance-switching interface in order to program and read the reversible resistance-switching interface. A process for manufacturing the memory is also disclosed.