公开(公告)号：US10854573B2

公开(公告)日：2020-12-01

申请号：US16248923

申请日：2019-01-16

Applicant: SANDISK TECHNOLOGIES LLC

Inventor： Zhongli Ji ,  Ning Ye ,  Tong Zhang ,  Hem Takiar ,  Yangming Liu

IPC: H01L21/00 ,  H01L23/00 ,  H01L23/31 ,  H01L27/11582 ,  H01L21/306 ,  H01L21/822 ,  H01L21/768 ,  H01L27/1157

Abstract: A substrate semiconductor layer is attached to a carrier substrate through a sacrificial bonding material layer. A plurality of semiconductor dies included within continuous material layers are formed on a front side of the substrate semiconductor layer. Each of the continuous material layers continuously extends over areas of the plurality of semiconductor dies. A plurality of dicing channels is formed between neighboring pairs among the plurality of semiconductor dies by anisotropically etching portions of the continuous material layers located between neighboring pairs of semiconductor dies. The plurality of dicing channels extends to a top surface of the sacrificial bonding material layer. The sacrificial bonding material layer is removed selective to materials of surface portions of the plurality of semiconductor dies using an isotropic etch process. The plurality of semiconductor dies is singulated from one another upon removal of the sacrificial bonding material layer.

公开(公告)号：US20200219842A1

公开(公告)日：2020-07-09

申请号：US16248923

申请日：2019-01-16

Applicant: SANDISK TECHNOLOGIES LLC

Inventor： Zhongli Ji ,  Ning Ye ,  Tong Zhang ,  Hem Takiar ,  Yangming Liu

IPC: H01L23/00 ,  H01L23/31 ,  H01L27/11582 ,  H01L27/1157 ,  H01L21/822 ,  H01L21/768 ,  H01L21/306

Abstract: A substrate semiconductor layer is attached to a carrier substrate through a sacrificial bonding material layer. A plurality of semiconductor dies included within continuous material layers are formed on a front side of the substrate semiconductor layer. Each of the continuous material layers continuously extends over areas of the plurality of semiconductor dies. A plurality of dicing channels is formed between neighboring pairs among the plurality of semiconductor dies by anisotropically etching portions of the continuous material layers located between neighboring pairs of semiconductor dies. The plurality of dicing channels extends to a top surface of the sacrificial bonding material layer. The sacrificial bonding material layer is removed selective to materials of surface portions of the plurality of semiconductor dies using an isotropic etch process. The plurality of semiconductor dies is singulated from one another upon removal of the sacrificial bonding material layer.