公开(公告)号：US11355580B2

公开(公告)日：2022-06-07

申请号：US16947564

申请日：2020-08-06

申请人： SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC

发明人： Thierry Coffi Herve Yao ,  Richard De Souza ,  Troy Darwin Clear

IPC分类号： H01L29/06 ,  H01L29/66 ,  H01L29/78 ,  H01L21/04 ,  H01L51/00

摘要： A method for fabricating a MOSFET includes forming a source region and a drain region on a surface of a semiconductor substrate, forming a gate region, forming a body diffusion region, forming metal structures, and forming a drift region including an n-type drift structure having a stepped dopant concentration profile with dopant concentrations increasing along a lateral direction from the drain region to the source region of the device.