公开(公告)号：US20230110306A1

公开(公告)日：2023-04-13

申请号：US17963004

申请日：2022-10-10

Applicant: SLT Technologies, Inc. ,  Kyocera Corporation

Inventor： Mark P. D'EVELYN ,  Paul M. VON DOLLEN ,  Rajeev Tirumala PAKALAPATI ,  Keiji FUKUTOMI ,  Maimi MONZEN ,  Koji MIYAMOTO ,  Motoi TAMAKI

IPC: C30B35/00 ,  C30B7/10

Abstract: Embodiments of the disclosure an apparatus for solvothermal crystal growth, comprising: a pressure vessel having a cylindrical shape and a vertical orientation; a cylindrical heater having an upper zone and a lower zone that can be independently controlled; at least one end heater; and an inward-facing surface of a baffle placed within 100 millimeters of a bottom end or top end surface of the growth chamber. The end heater is configured to enable: a variation in the temperature distribution along a first surface to be less than about 10° C., and a variation in the temperature distribution along a second surface to be less than about 20° C., during a crystal growth process. The first surface has a cylindrical shape and is positioned within the pressure vessel, and the second surface comprises an inner diameter of the growth chamber, and the temperature distribution along the second surface is created within an axial distance of at least 100 millimeters of an end of the growth chamber proximate to the first surface.

公开(公告)号：US20240247406A1

公开(公告)日：2024-07-25

申请号：US18418141

申请日：2024-01-19

Applicant: SLT Technologies, Inc.

Inventor： Drew W. CARDWELL ,  Dirk EHRENTRAUT ,  Mark P. D'EVELYN ,  Rajeev Tirumala PAKALAPATI

IPC: C30B29/40 ,  C30B7/10

CPC classification number: C30B29/403 ,  C30B7/105

Abstract: Embodiments of the disclosure include a free-standing crystal, comprising a group III metal and nitrogen. The free-standing crystal may comprise: a wurtzite crystal structure; a growth direction, the growth direction being selected from one of [0 0 0 ±1], {1 0 −1 0}, {1 0 −1 ±1}, or {1 0 −1 ±2}. A first surface having a dislocation density between 1 cm−2 and 107 cm−2, the dislocations having an orientation within 30 degrees of the growth direction, and an average impurity concentration of H greater than 1017 cm−3. The free-standing crystal having at least four sets of bands, wherein each set of bands includes a first sub-band and a second sub-band, the first sub-band having a concentration of at least one impurity selected from H, O, Li, Na, K, F, Cl, Br, and I; and each of the at least four sets of bands have portions that are substantially parallel.

公开(公告)号：US20240158950A1

公开(公告)日：2024-05-16

申请号：US18505963

申请日：2023-11-09

Applicant: SLT Technologies, Inc.

Inventor： Paul M. VON DOLLEN ,  Drew W. CARDWELL ,  Mark P. D'EVELYN ,  Rajeev Tirumala PAKALAPATI

IPC: C30B7/10

CPC classification number: C30B7/105 ,  C30B29/403

Abstract: According to the present disclosure, techniques related to processing of materials for growth of crystals are provided. More particularly, the present disclosure provides apparatus and methods for heating of seed crystals suitable for use in conjunction with a high-pressure vessel for crystal growth of a material having a retrograde solubility in a supercritical fluid, including crystal growth of a group III metal nitride crystal by an ammonobasic or ammonoacidic technique, but there can be others. In other embodiments, the present disclosure provides methods suitable for synthesis of crystalline nitride materials, but it would be recognized that other crystals and materials can also be processed. Such crystals and materials include, but are not limited to, GaN, AlN, InN, InGaN, AlGaN, and AlInGaN, and others for manufacture of bulk or patterned substrates. Such bulk or patterned substrates can be used for a variety of applications including optoelectronic devices, lasers, light emitting diodes, solar cells, photoelectrochemical water splitting and hydrogen generation, photodetectors, integrated circuits, and transistors, among other devices.