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    ULTRAPURE MINERALIZER AND IMPROVED METHODS FOR NITRIDE CRYSTAL GROWTH
    1.
    发明申请
    ULTRAPURE MINERALIZER AND IMPROVED METHODS FOR NITRIDE CRYSTAL GROWTH 有权

    公开(公告)号：US20220136128A1

    公开(公告)日：2022-05-05

    申请号：US17514656

    申请日：2021-10-29

    Applicant: SLT Technologies, Inc

    Inventor： Mark P. D'EVELYN ,  Paul M. VON DOLLEN ,  Lisa M. GAY ,  Douglas W. POCIUS ,  Jonathan D. COOK

    IPC: C30B7/10 ,  C30B29/40

    Abstract: A method for growth of group III metal nitride crystals includes providing a manifold comprising including one or more transfer vessels, a source vessel containing a condensable mineralizer composition, and a receiving vessel, chilling a metallic surface within the one or more transfer vessels, the metallic surface comprising a composition that does not form a reaction product when exposed to the condensable mineralizer composition, transferring a quantity of the condensable mineralizer composition to the one or more transfer vessels via a vapor phase and causing condensation of the condensable mineralizer composition within the one or more transfer vessels, measuring the quantity of the condensable mineralizer composition within the at least one transfer vessel, transferring at least a portion of the condensable mineralizer composition to the receiving vessel, and forming at least a portion of a group III metal nitride boule by an ammonothermal crystal growth process that comprises exposing a seed crystal to a temperature of at least about 400 degrees Celsius, and exposing the seed crystal to a mineralizer that is formed from the condensable mineralizer composition transferred from the receiving vessel.

    METHOD AND SYSTEM FOR PREPARING POLYCRYSTALLINE GROUP III METAL NITRIDE
    3.
    发明申请
    METHOD AND SYSTEM FOR PREPARING POLYCRYSTALLINE GROUP III METAL NITRIDE 审中-公开

    公开(公告)号：US20200283892A1

    公开(公告)日：2020-09-10

    申请号：US16814813

    申请日：2020-03-10

    Applicant: SLT Technologies, Inc

    Inventor： Douglas W. POCIUS ,  Derrick S. KAMBER ,  Mark P. D'EVELYN ,  Jonathan D. COOK

    IPC: C23C16/30 ,  C23C16/44 ,  C30B7/10 ,  C30B29/40 ,  C23C16/01 ,  C01B21/06 ,  C23C16/448

    Abstract: A process of preparing polycrystalline group III nitride chunks comprising the steps of (a) placing a group III metal inside a source chamber; (b) flowing a halogen-containing gas over the group III metal to form a group III metal halide; (c) contacting the group III metal halide with a nitrogen-containing gas in a deposition chamber containing a foil, the foil comprising at least one of Mo, W, Ta, Pd, Pt, Ir, or Re; (d) forming a polycrystalline group III nitride layer on the foil within the deposition chamber; (e) removing the polycrystalline group III nitride layer from the foil; and (f) comminuting the polycrystalline group III nitride layer to form the polycrystalline group III nitride chunks, wherein the removing and the comminuting are performed in any order or simultaneously.

    GROUP III NITRIDE SUBSTRATE WITH OXYGEN GRADIENT, METHOD OF MAKING, AND METHOD OF USE
    4.
    发明公开
    GROUP III NITRIDE SUBSTRATE WITH OXYGEN GRADIENT, METHOD OF MAKING, AND METHOD OF USE 审中-公开

    公开(公告)号：US20230167586A1

    公开(公告)日：2023-06-01

    申请号：US18072684

    申请日：2022-11-30

    Applicant: SLT Technologies, Inc.

    Inventor： Mark P. D'EVELYN ,  Keiji FUKUTOMI ,  Drew W. CARDWELL ,  David N. ITALIANO ,  Chiaki DOMOTO

    IPC: C30B29/40

    CPC classification number: C30B29/406 ,  C30B7/105

    Abstract: Embodiments of the present disclosure include techniques related to techniques for processing materials for manufacture of group-III metal nitride and gallium based substrates. More specifically, embodiments of the disclosure include techniques for substrates with a controlled oxygen gradient using a combination of processing techniques. Merely by way of example, the disclosure can be applied to growing crystals of GaN, AlN, InN, InGaN, AlGaN, and AlInGaN, and others for manufacture of bulk or patterned substrates. Such bulk or patterned substrates can be used for a variety of applications including optoelectronic and electronic devices, lasers, light emitting diodes, solar cells, photo electrochemical water splitting and hydrogen generation, photodetectors, integrated circuits, and transistors, and others.

    ALUMINUM-CONTAINING NITRIDE CERAMIC MATRIX COMPOSITE, METHOD OF MAKING, AND METHOD OF USE
    5.
    发明申请
    ALUMINUM-CONTAINING NITRIDE CERAMIC MATRIX COMPOSITE, METHOD OF MAKING, AND METHOD OF USE 有权

    公开(公告)号：US20230111390A1

    公开(公告)日：2023-04-13

    申请号：US17963910

    申请日：2022-10-11

    Applicant: SLT Technologies, Inc.

    Inventor： Mark P. D'EVELYN ,  David N. ITALIANO

    IPC: C04B35/581 ,  C04B35/65 ,  C04B35/645 ,  C04B35/626 ,  C09K11/02 ,  C09K11/77

    Abstract: Embodiments of disclosure may provide a method for forming an aluminum-containing nitride ceramic matrix composite, comprising heating a green body, an aluminum-containing composition, ammonia and a mineralizer composition in a sealable container to a temperature between about 400 degrees Celsius and about 800 degrees Celsius and a pressure between about 10 MPa and about 1000 MPa, to form an aluminum-containing nitride ceramic matrix composite characterized by a phosphor-to-aluminum nitride (AlN) ratio, by volume, between about 1% and about 99%, by a porosity between about 1% and about 50%, and by a thermal conductivity between about 1 watt per meter-Kelvin and about 320 watts per meter-Kelvin. The green body comprises a phosphor powder comprising at least one phosphor composition, wherein the phosphor powder particles are characterized by a D50 diameter between about 100 nanometers and about 500 micrometers, and the green body has a porosity between about 10% and about 80%. The aluminum-containing composition has a purity, on a metals basis, between about 90% and about 99.9999%. The fraction of free volume within the sealable container contains between about 10% and about 95% of liquid ammonia prior to heating the green body, the aluminum-containing composition, ammonia and the mineralizer composition in the sealable container.

    ULTRAPURE MINERALIZER AND IMPROVED METHODS FOR NITRIDE CRYSTAL GROWTH
    9.
    发明公开
    ULTRAPURE MINERALIZER AND IMPROVED METHODS FOR NITRIDE CRYSTAL GROWTH 审中-公开

    公开(公告)号：US20240240352A1

    公开(公告)日：2024-07-18

    申请号：US18434568

    申请日：2024-02-06

    Applicant: SLT Technologies, Inc.

    Inventor： Mark P. D'EVELYN ,  Paul M. VON DOLLEN ,  Lisa M. GAY ,  Douglas W. POCIUS ,  Jonathan D. COOK

    IPC: C30B7/10 ,  C30B29/40

    CPC classification number: C30B7/105 ,  C30B29/403

    Abstract: A method for growth of group Ill metal nitride crystals includes providing one or more transfer vessels, a source vessel containing a condensable mineralizer composition, and a receiving vessel, chilling a metallic surface within the one or more transfer vessels, transferring a quantity of the condensable mineralizer composition to the one or more transfer vessels via a vapor phase and causing condensation of the condensable mineralizer composition within the one or more transfer vessels, measuring the quantity of the condensable mineralizer composition within the at least one transfer vessel, transferring at least a portion of the condensable mineralizer composition to the receiving vessel, and forming at least a portion of a group Ill metal nitride boule by an ammonothermal crystal growth process.

    LARGE AREA GROUP III NITRIDE CRYSTALS AND SUBSTRATES, METHODS OF MAKING, AND METHODS OF USE
    10.
    发明公开
    LARGE AREA GROUP III NITRIDE CRYSTALS AND SUBSTRATES, METHODS OF MAKING, AND METHODS OF USE 审中-公开

    公开(公告)号：US20230340695A1

    公开(公告)日：2023-10-26

    申请号：US18338280

    申请日：2023-06-20

    Applicant: SLT Technologies, Inc.

    Inventor： Dirk EHRENTRAUT ,  Mark P. D'EVELYN ,  Drew W. CARDWELL

    IPC: C30B29/60 ,  C30B29/40 ,  C30B7/10

    CPC classification number: C30B29/605 ,  C30B29/403 ,  C30B29/406 ,  C30B7/105

    Abstract: Embodiments of the present disclosure include techniques related to techniques for processing materials for manufacture of group-III metal nitride and gallium based substrates. More specifically, embodiments of the disclosure include techniques for growing large area substrates using a combination of processing techniques. Merely by way of example, the disclosure can be applied to growing crystals of GaN, AlN, InN, InGaN, AlGaN, and AlInGaN, and others for manufacture of bulk or patterned substrates. Such bulk or patterned substrates can be used for a variety of applications including optoelectronic and electronic devices, lasers, light emitting diodes, solar cells, photo electrochemical water splitting and hydrogen generation, photodetectors, integrated circuits, and transistors, and others.

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