公开(公告)号：US20250155525A1

公开(公告)日：2025-05-15

申请号：US18849562

申请日：2024-03-18

Applicant: SOUTHEAST UNIVERSITY

Inventor： Long ZHANG ,  Weifeng SUN ,  Siyang LIU ,  Guiqiang ZHENG ,  Yichen LI ,  Xueqi LI ,  Longxing SHI

IPC: G01R33/00 ,  G01R33/07 ,  H01L21/762 ,  H10N52/01 ,  H10N52/80

Abstract: A horizontal Hall device includes a substrate layer and a BOX layer arranged on the substrate layer, where an epitaxial layer is arranged on the BOX layer, a well layer is arranged on the epitaxial layer, an STI layer is arranged on the well layer, a pair of induction electrodes and a pair of bias electrodes are arranged on the STI layer, ground electrodes are arranged on the epitaxial layer, and current barrier layers are arranged between the induction electrodes and the adjacent bias electrodes.